微波晶体管激光模型可以非常准确的预测频变电和光的属性。
The microwave transistor laser model is very accurate for predicting frequency-dependent electrical and optical properties.
简述了微波晶体管s参数自动测试的必要性和迫切性。
This paper describes necessity and urgency of automatically testing the S-parameters of microwave transistors shortly.
本文对微波晶体管宽带低噪声放大器的设计和实现进行了研究。
This paper deals with the process of microwave broadband and low noise amplifier design and research.
提出了一种新的设计微波晶体管放大器的电路模型，给出了通用优化设计程序。
This paper presents a new circuit model for designing a microwave transistor amplifier, and gives a general optimum programing.
由于利用代数消去法，去除了嵌入参量相位不确定性引入的误差，LRL法可用于微波晶体管测试夹具的去嵌入。
The errors caused by the phase uncertainties of embedded parameters are deleted. In addition, LRL method can be used to DE - embed the s parameters from the microwave transistor test fixture.
本设计的目的是建立一个用于宽带固态放大器的宽带微波功率晶体管。
The objective of this design is to a broadband microwave power transistor used in broadband solid state amplifier.
设计了一种称之为多晶硅覆盖树技状结构的双极型微波功率晶体管。
A new device structure of silicon bipolar microwave power transistors with so called tree overlay geometry polysilicon emitter has been designed.
在微波双极型晶体管中，收集区的厚度是影响其截止频率的一个重要因素。
The thickness of collector is one of the factors that limit cut-off frequency in microwave bipolar transistors.
经过反复实验，在现有设备条件下，为3dg460微波低噪声晶体管的研制提供了合格光刻版。
Experimenting repeatedly, by our limited equipments we provided the qualified photomask for the study of 3dg460 microwave low-noise transistor.
长期以来，解决微波功率晶体管的电流集中问题的通用做法是使用发射极镇流电阻，以及PTC,CTR热敏电阻等无源器件。
For a long time, a common and popular method to solve current convergence problem of microwave power transistor is using emitter ballasting resistor, such as PTC, CTR thermistor, passive devices etc.
首次采用多晶硅发射区RCA技术制备出微波功率晶体管。
A polysilicon emitter RCA microwave transistor was fabricated to fit the power application for the first time.
本文对双极性微波功率晶体管(以下简称微波功率晶体管)求解了稳态工作条件下的三维热传导方程。
The three-dimensional heat conduction equation for steady state operating conditions of bipolar microwave power transistors has been solved.
设备采用了普通的漂移晶体管和微波晶体检波器。
In this circuits microwave crystal detectors is adopted for the sampling gate.
设备采用了普通的漂移晶体管和微波晶体检波器。
In this circuits microwave crystal detectors is adopted for the sampling gate.
应用推荐