利用原子力显微镜加工超快光导开关器件原型。
The prototype of the ultrafast photoconductive switch is fabricated using AFM.
这提供了一个短暂接触感应开关的基础和位置感应开关器件。
This provides the basis for an inductive momentary contact switch and an inductive position switching device.
中频大功率感应加热装置，多年来一直采用可控硅做为开关器件。
Medium frequency high power induction heating apparatus, for many years has adopted silicon controlled as switching devices.
在所研制的新型无触点电力稳压器中，采用晶闸管作为开关器件。
Use the thyristor as switch devices in researched and produced new type contactless power stabilized voltage supply.
我们的产品广泛应用于通讯、电源、开关器件、CRT、家用电器。
Our products are widely used in communication Power supply, Switching, CRT, and Household appliance.
特别是三相四线制有源电力滤波器硬件结构简单，只有三组开关器件。
Especially three-phase four-wire active power filter hardware has simple structure with only three group switch device.
电力电子线路的核心多为大功率开关器件，其稳定安全运行至关重要。
The core of electric power circuit probably is big power switch unit, and it's most important that it runs stably and safely.
文章概述了这些光开关的原理，并进而介绍了光开关器件的最新进展。
In this paper, the basic principles of those devices are illustrated and the state-of-the-art advances of optical switches are introduced.
这种在非相干辐照控制下折射率的迅速改变有望应用于全光学开关器件。
The change of the refractive index controlled by the incoherent irradiation can be applied in the all optical switch.
设计了新型的光开关器件，该器件建立在掺杂电光材料的一维光子晶体上。
The switch bases on one-dimensional photonic crystal doped by electro-optical material.
当调制系数较低时，会造成开关器件利用率不均匀，导致部分器件提前损坏。
As a result, some switching devices would be worn out earlier because of the unbalanced utilization at low modulation indices.
光致极性和分子结构的变化使偶氮衍生物作为可逆的分子开关器件得以普遍应用。
The photoinduced changes in polarity and molecular structure have led to widespread application of azobenzene derivatives as reversible molecular switch devices.
该变流器采用MCS - 8098单片机作为控制器，GTO作为功率开关器件。
MCS 8098 single chip microcomputer and GTOs are adopted as processor and power switching devices.
最后分析了磁性元件的特性，变压器，电感的设计和MOSFET开关器件的选型。
Ultimate analysis magnetic elements' characteristic, transformer, inductance design and MOSFET switch component's shaping.
结果表明该电路限定开关器件电压变化率和电流变化率的能力良好，具有功耗较低的优势。
The result shows that the circuit is powerful in limiting the voltage and the current change rates of the switch devices and has an advantage of less power consumption.
其主电路采用全桥式拓扑结构，以IGBT管为功率开关器件，中频变压器使用微晶磁心。
Full bridge topology was used in the main circuit, IGBT was used as power switching device, and micro-crystal core was used in mid-frequency transformer.
介绍一种带变压隔离器、含多个功率开关器件的PWM变换器工作在连续状态的建模方法。
A new method is introduced for modeling PWM DC-DC converter with multi-switches and transformers, which operate in continuous conduction mode, including parasitic components.
考虑到系统功率较大，三相桥式功率变换器的每个开关器件均采用四个MOS管并联的结构。
For high power system, every switch of three-phase inverter is actually made up of four MOSFETs in Parallel.
开关式励磁调节器主回路设计中需要考虑的两个主要问题是开关器件的尖峰电压和冲击电流。
Two main problems in designing the main circuit of switching mode excitation controller are peek voltage and over current of switching device.
主要内容包括PWM斩波电路结构及功率开关器件的选择，驱动电路，保护电路以及软件编程。
The PWM chopper circuit and the selection of power switching elements, protecting circuits, driving units and software programming are given out.
本文建立了开关器件在不同关断方式下的统一模型，分析了关断过电压与电路参数之间的关系。
This paper builds a general model of switching devices during different turnoff mode, and analyzes the relationship between the overvoltage and the circuit parasitic parameters.
IGCT是一种基于GTO结构并利用集成门极电路进行硬驱动控制的大功率半导体开关器件。
IGCT is a kind of high power semiconductor based on GTO structure, which achieves hard turn-off by the integrated gate circuit.
为了得到实际输出电压波形，根据开关器件通断时间的具体要求，提出了展宽开关角对的优化策略。
For obtaining practical output voltage waveform, the optimized strategy of widening a couple of switch angles is presented based on the specific requirement of on-off time of switching device.
为解决开关器件在多电平高压功率变换器的驱动和保护问题，提出了一种光纤隔离的驱动保护电路。
The circuit isolated by optical fibre for transmitting drive signals and avoiding over current is proposed to solve drive and protection problems for transistors in high-voltage multi-level convertor.
逆变桥电路开关过程中出现的电压尖峰和大的开关损耗是导致主开关器件igbt损坏的主要原因之一。
The voltage peak and switching loss during switching of inverter is the main cause that due to the damage of IGBT.
详细介绍了此开关器件的结构、特点及其区别于其他驱动芯片的优势，并给出了器件应用的电气原理图。
The structure, control feature of the switch and some advantages over other driving chip are Introduce in detail, is given the electrical principle chart for automobile application.
用相平面法对谐振参数变化规律进行了分析，讨论了参数的最佳控制、开关器件的贮存时间补偿等问题。
After the parameters in control law is analyzed by Phase-Plane method, other questions including optimal control, compensation of storage time are also discussed.
介绍一种以SCR作主开关器件的SPWM控制方式的变频调速系统，并通过实验对提出的方案进行了验证。
The paper presents a SPWM frequency variable and velocity variable system with SCR as main switching devices. The proposed scheme has been verified through experiment.
提出了一种新型的双重单端正激式弧焊逆变电源，采用IGBT为开关器件，引入了电流型脉宽调制控制器。
A new double single-ended forward arc welding power inverter with IGBT as power device and current PWM controller is introduced in this paper.
提出了一种新型的双重单端正激式弧焊逆变电源，采用IGBT为开关器件，引入了电流型脉宽调制控制器。
A new double single-ended forward arc welding power inverter with IGBT as power device and current PWM controller is introduced in this paper.
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