本发明描述使用定向反应物气流和相对于所述气流移动的基板的次大气压化学气相沉积。
Sub-atmospheric pressure chemical vapor deposition is described with a directed reactant flow and a substrate that moves relative to the flow.
本发明描述使用定向反应物气流和相对于所述气流移动的基板的次大气压化学气相沉积。
Sub-atmospheric pressure chemical vapor deposition is described with a directed reactant flow and a substrate that moves relative to the flow.
应用推荐