在多量子阱结构中可看到明显的共振隧穿效应。
标签硅锗多量子阱垂直方向子带间吸收色散效应。
SiGe multi quantum Wells normal incidence intersubband absorption dispersion effect.
从理论上推出多量子阱垂直腔面发射半导体激光器的速率方程。
The rate equations for multi quantum well VCSELs are deduced theoretically; and its output characteristics, i.
从理论上推出多量子阱垂直腔面发射半导体激光器的速率方程。
The rate equations for multi quantum well VCSELs are deduced theoretically;
净应力是失配位错增殖的驱动力，是应变多量子阱稳定的重要判据。
The net stress is a driving force of misfit dislocation multiplication and is a very important factor for strained MQWs stability.
采用传输矩阵方法，研究了一维双周期厚度调制的多量子阱的透射谱。
The transmission spectrum of multiple quantum well structure with thickness-modulated dual-period was studied by means of transfer matrix method.
报道了基于混合应变多量子阱有源材料的半导体光放大器及其增益特性。
Semiconductor optical amplifier with mix strained quantum well active material and its gain performance are reported.
本文提出了一种快速和精确分析多量子阱(MQW)条形光波导的新算法。
This paper presents a new algorithm for fast and accurate analysis of stripe Multiple Quantum Well (MQW) waveguides.
该文利用转移矩阵方法导出了多沟道波导和多量子阱波导的TM模式色散方程。
In this paper, we have deduced the TM mode dispersion equations of the multi-channel waveguide and the multi-quantum well optical waveguides by using this method.
利用选择性部分无序技术获得了单片外延片上不同区域的多量子阱在结构与性质上的差异。
The differences in the structures and properties of multiple quantum well between different areas on a wafer were achieved using selective partial disordering.
利用耦合多量子阱载流子动力学模型，模拟了非对称双量子阱中载流子耦合的温度依赖性。
The temperature dependence of the carrier coupling in an asymmetric double-quantum-well was simulated by using the coupling multiple-quantum-well model of carrier dynamics.
通过计算应变多量子阱中的净应力和应变弛豫，讨论了激光器结构中应变多量子阱的稳定性。
In this paper, the stability of strained MQWs in laser structure is discussed in terms of the calculation of net stress and strain relaxation.
光电流谱峰与激发光谱峰的斯塔克位移提供了多量子阱中电场分布的信息，并证明了耗尽区模型的正确性。
The Starkshift of PC peaks relative to ple ones gives a clear indication to the distribution of electricfield in MQW region and the validity of depletion model.
提供了一种用于发光二极管的多量子阱(MQW)结构以及用于制造用于发光二极管的MQW结构的方法。
A multiple quantum well (MQW) structure for a light emitting diode and a method for fabricating a MQW structure for a light emitting diode are provided.
对锥形透镜光纤(TLF)与半导体多量子阱(MQW)平面光波光路(PLC)芯片的耦合特性进行了实验研究。
The coupling characteristics of tapered and lensed fiber (TLF) and semiconductor MQW planar lightwave circuit (PLC) chip was investigated experimentally.
对多量子阱被动锁模半导体激光器的噪声理论进行了系统的分析，并给出了半导体激光器腔内相位随载流子浓度变化的关系。
In this paper, the noise theory of monolithic multi-quantum-well passively mode-locked laser diodes (MLLDs) is discussed, and the phase variation curve with carrier population of MLLDs is found.
对多量子阱被动锁模半导体激光器的噪声理论进行了系统的分析，并给出了半导体激光器腔内相位随载流子浓度变化的关系。
In this paper, the noise theory of monolithic multi-quantum-well passively mode-locked laser diodes (MLLDs) is discussed, and the phase variation curve with carrier population of MLLDs is found.
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