辐照后基极电流、结漏电流增大，集电极电流、击穿电压减小。
The base current and the junction leakage current increase, while the collector current and the breakdown voltage decrease for SiGe HBTs after radiation.
本文从包括埋层影响的集区杂质分布出发，求出了寄生PNP晶体管的共基极电流放大系数。
We try to obtain the common-base current gain a of the parasitic PNP transistor from the eloping profile of the collector region including the effect of buried-layer.
输入失调电流是两个差动输入端的基极输入电流，当两个输入端的源阻抗不相等时，它可引起仪表放大器的失调误差。
Input offset current is the difference between the two input bias currents and this leads to offset errors in in-amps when source resistances in the two input terminals are unequal.
该晶体管包括第一和第二电极(2,6)、以及控制第一和第二电极之间的电流的基极电极(6)。
The transistor comprises a first and a second electrode (2, 6) and base electrode (6) to control current flow between the first and second electrode.
由于Q2的基极-发射极的电压为0V而截止，因此没有负载电流流过r6。
Consequently, no load current flows through R6 because Q2, whose base-emitter voltage is now 0v, has turned off.
选择R6的阻值时要确保在负载电流的最高允许值的条件下，Q2的基极-发射极电压大约低于0.5V。
When choosing a value for R6, ensure that Q2's base-emitter voltage is less than approximately 0.5V at the maximum permissible value of the load current.
选择R6的阻值时要确保在负载电流的最高允许值的条件下，Q2的基极-发射极电压大约低于0.5V。
When choosing a value for R6, ensure that Q2's base-emitter voltage is less than approximately 0.5V at the maximum permissible value of the load current.
应用推荐