三种吸杂方式都能明显提高多晶硅的少子寿命。
All these three ways can improve the minority carrier lifetime effectively.
多晶硅能促进硅片内的氧沉淀成核和生长，起内吸杂作用。
The polysilicon can enhance oxygen precipitation nucleating and growing, acting as the intrinsic gettering.
将快速热处理（RTP）引入到快中子辐照掺氮直拉硅的内吸杂工艺中。
Rapid thermal process (RTP) was used in the intrinsic gettering (IG) process of fast neutron irradiated CZSi.
首次将快速热处理（RTP）引入到快中子辐照直拉硅的内吸杂工艺中。
Rapid thermal process (RTP) was first used in the intrinsic gettering (IG) process of fast neutron irradiated CZSi.
“欧洲呼吸杂志”中写到，经过训练的狗可以检测出患者中71%的肿瘤。
Writing in the European Respiratory Journal, they found that trained dogs could detect a tumour in 71% of patients.
磷吸杂作为提升晶体硅材料性能的主要手段被广泛应用在太阳电池的生产工艺中。
As one of the key processes, phosphorous gettering treatment has been widely applied to improve the electrical properties of crystalline silicon which is the main photovoltaic material.
本文研究了直拉硅单晶的氧内吸杂（IG）工艺中，单晶的碳含量对缺陷形成的影响。
The influence of carbon on the defect formation during oxygen intrinsic gettering(IG) process has been studied for CZ silicon.
研究人员在欧洲呼吸杂志上报道说，经过中位数时间为1.9年的随访后，有333名患者死亡。
Over a median follow-up period of 1.9 years, 333 patients died, the researchers report in the European Respiratory Journal.
据最近一项来自欧洲呼吸杂志研究表明：非典型呼吸道病原体在慢性阻塞性肺疾病恶化加剧中并无意义。
We investigated the presence of these atypical pathogens in sputum samples in patients with stable COPD and those with AECOPD using real-time PCR.
集成电路特征线宽的不断减小对直拉（CZ）单晶硅片中的缺陷控制和内吸杂技术提出了愈来愈高的要求。
The ever-smaller feature size of integrated circuit imposes on increasingly stringent requirements on the defect control and internal gettering(IG)capability of Czochralski(CZ)silicon wafers.
集成电路特征线宽的不断减小对直拉（CZ）单晶硅片中的缺陷控制和内吸杂技术提出了愈来愈高的要求。
The ever-smaller feature size of integrated circuit imposes on increasingly stringent requirements on the defect control and internal gettering(IG)capability of Czochralski(CZ)silicon wafers.
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