某些材料是电致发光的，电致发光效应已经用于显示器背光的结构中。
Certain materials are electroluminescent, and this electroluminescent effect has been used in the construction of backlights for displays.
大部分理论计算研究的是量子限制对多孔硅和纳米硅晶发光的效应。
Most of theoretical researches studied the quantum confinement effect on the luminescence of porous Si and Si nanocrystallites.
这些数据和结果有助于设计和研制自旋场效应晶体管、自旋发光二极管和自旋共振隧道器件等。
These data and results are helpful to design and develop spin field effect transistor, spin light-emitting diode, spin resonant tunneling device, etc.
半导体量子点可利用量子尺寸效应，具有可调节红外宽带发光中心波长等特点。
Due to the quantum size effect, semiconductor quantum dot nanocrystals can be used to adjust the wavelength of the luminescence center for broadband infrared emission.
研究表明有机半导体微腔效应可通过简单地调节有机发光层的厚度来实现。
Microcavity effect has been achieved simply by adjusting the thickness of organic light emitting layer.
本发明的实施例涉及作为发光晶体管的纵向场效应晶体管。
Embodiments of the invention relate to vertical field effect transistor that is a light emitting transistor.
观察到随着粒子的尺寸减小，其吸收和发光光谱明显蓝移，存在明显的量子尺寸效应。
It was found that absorption edge and photoluminescence peak shifted to shorter wavelength with decreasing the nanocrystal size due to quantum size effect.
并认为蓝移现象以及余辉衰减变快，主要归因于发光粉体纳米粒子的量子尺寸效应的影响。
The blue shift and the change of luminescent intensity can be attributed to the quantum-size-effect of the phosphor particles.
运用高灵敏度的共焦显微拉曼系统研究了多孔硅在纵向的拉曼效应和光致发光的性质。
Raman and photoluminescence studies of porous silicon were performed using a highly sensitive confocal microprobe Raman system, which allows the z direction layer analysis of the sample surface.
纳米硅的发光峰随退火温度升高而红移呈量子尺寸效应。
As the annealing temperature increases the red shift of PL peak from nc si shows the quantum size effect.
对不同实验条件下所得到的多孔硅的拉曼光谱进行了分析，确认了多孔硅是具有纳米晶结构特征的材料，肯定了量子限制效应在多孔硅光致发光中的作用。
The spectra analysis showed that porous silicon is the material with nano crystal structure, and photoluminescence of PS can be explained by the model of quantum restriction effect.
紫外可见吸收光谱和光致发光荧光光谱清楚的显示出量子限域效应，同时也研究了量子点的时间分辨荧光光谱。
The UV-visible absorption and photoluminescence spectra show the quantum confinement effect clearly. The time-resolved photoluminescence spectra have also been examined.
荧光强度与激发光强度的三次方关系表明，有效的荧光产生起源于三阶非线性光学效应的增强。
The intensity dependence of integrated luminescence on pump power shows that this is a third-order nonlinear optical effect.
尺寸选择激发光谱表现了较强量子尺寸效应引起的最低光学跃迁之间能量差的增大。
Size-selective photoluminescence excitation spectra reveal that energy difference between the lowest optical translations increases due to stronger size quantum effect.
此外，合适的激发光，能更好地匹配金属衬底的表面等离子体共振吸收，对表面增强荧光效应更加有利。
It is also found that proper excitation wavelength, which corresponds to greater SPR absorption of metal substrate, is another factor that can significantly influence the SEF effect.
这种效应对于发光二极体来说是特别重要的，因为发光二极体所发射的光谱带宽可达几百埃。
This effect is particularly important for leds since the emitted spectral width is several hundred angstroms.
这种效应对于发光二极管来说是特别重要的，因为发光二极管所发射的光谱带宽可达几百埃。
This effect is particularly important for leds since the emitted spectral width is several hundred angstroms .
这种效应对于发光二极管来说是特别重要的，因为发光二极管所发射的光谱带宽可达几百埃。
This effect is particularly important for leds since the emitted spectral width is several hundred angstroms .
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