逆变器采用绝缘栅双极晶体管模块制造。
The inverter can be manufactured with the insulation gate bipolar transistor module.
这些结果将为低温双极晶体管的设计提供理论依据。
Thase results provides a theoretical basis for rational DE - sign of low temperature bipolar transistors.
在一般的双极晶体管，带有电输入和输出端口，这定律完全适用。
On a basic bipolar transistor, with ports for electrical input and output, the law applies straightforwardly.
这些原因导致了PNP双极晶体管的输出性能差强人意。
As a result, output character of PNP bipolar transistor is barely satisfying.
对双极晶体管进行了不同剂量率、不同偏置的电离辐照实验。
Ionizing radiation response of bipolar transistors at different dose rates and biases has been investigated.
简要介绍了绝缘栅双极晶体管IGBT驱动保护电路的原则。
The principle of the driven and protection circuit for IGBT is briefly introduced.
根据本发明，存在制造包括双极晶体管的集成电路的各种方法。
In accordance with the invention, there are various methods of making an integrated circuit comprising a bipolar transistor.
该电路由一集成运算放大器及多端输出的双极晶体管电流镜构成。
The circuit is constructed by a operational amplifier and bipolar transistor current mirrors with multiple outputs.
功率器件以使用双极晶体管为主，今后使用IGBT会逐渐增多。
Double pole transistor in power device is major and the apply of IGBT will be more and more.
硅绝缘栅双极晶体管(IGBT)技术在进步，成为更好和更便宜。
Silicon insulated-gate bipolar transistor (IGBT) technology is progressing, becoming better and cheaper.
本文提出互补横向绝缘栅双极晶体管CLIGBT的一种网络模型。
A new network model for the complementary lateral insulated-gate bipolar transistor CLIGBT is presented in this paper.
用该表达式可以很方便、明了地对功率双极晶体管进行热稳定性分析。
This expression can be used to analyze the thermal stability of power HBT conveniently and explicitly.
对双极晶体管结构和关键性能参数进行了研究和设计，并进行了流片测试。
The main structure and key performance parameters of the bipolar transistor were studied and designed, it was taped out and tested.
提出一种求解异质结双极晶体管(HBT)小信号等效电路模型的解析方法。
This paper discussed an analytical method for determining the heterojunction bipolar transistors (HBTs) equivalent circuit model.
借助双极传输理论导出了高速绝缘栅双极晶体管(IGBT)传输特性的物理模型。
The high speed insulated gate bipolar transistor (IGBT) transport model is derived by ambipolar transport theory in this paper.
采用标准分立双极元件，对双极晶体管瞬态辐射光电流分流补偿法进行了实验验证。
Experiment using discrete bipolar transistors has been performed to verify the effect of the photocurrent compensation method.
利用CMOS工艺下衬底型双极晶体管的温度特性，设计了一种精度较高的温度传感器。
A high accuracy temperature sensor is designed by applying the temperature characteristics of a substrate bipolar transistor in CMOS technology.
轻型高压直流输电是在电压源换流器和绝缘栅双极晶体管基础上开发出来的一种新型输电技术。
The light HVDC transmission is a new power transmission technology based on the voltage source converters(VSCs) and IGBT power semiconductors.
于本发明第一实施例中包括一nmos晶体管、一pmos与一双极晶体管形成于基底的不同区域。
A first embodiment of the present invention includes an NMOS transistor, a PMOS transistor, and a bipolar transistor formed on different areas of the substrate.
本发明提供一种绝缘栅双极晶体管(IGBT)，所述绝缘栅双极晶体管占据小面积并且抑制热击穿。
Provided is an insulated gate bipolar transistor (IGBT) which occupies a small area and in which a thermal breakdown is suppressed.
本文采用较全面的包括四个寄生双极晶体管和MOS管的闩锁模型，详细分析了瞬态辐照下CMOS反相器的闩锁效应。
In this paper, a new lumped elements latchup model consisting of four bipolar transistors is used to analyze the latchup effect of CMOS inverters in transient radiation environment.
本文在分析了IGBT（绝缘栅双极晶体管）特性的基础上，设计了一台容量为2KVA、频率为20KHZ的高频逆变电源。
This paper has designed a inverter power supply of volume 2KVA, working frequency 20KHZ. , based on that has analyzed the characteristic of IGBT (Insulated Gate Bipolar Transistor).
同时，采用专用芯片SG3525来产生脉宽调制电路，由IR2110组成的驱动电路来驱动绝缘门极双极晶体管（IGBT）。
Special chips, such as SG3525 and IR2110 are also used to generate PWM and to drive the IGBT.
详细地介绍了可控硅整流器(SCR)线型触发器的改进型设计方案，提出了用于高脉冲重复频率的双极晶体管触发器的实用新电路。
An improved plan of silicon controlled rectifier (SCR) line type trigger is described in detail. Anew practical circuit of bipolar transistor trigger for high pulse repeat frequency is presented.
本文提出空穴注入控制型横向绝缘栅双极晶体管(CILIGBT)，可有效控制高压下阳极区空穴注入，提高器件的抗闩锁性能。
Controlled hole injection LIGBT (CI LIGBT) is proposed in the paper, which can effectively control the hole injection with high anode voltage, and its latch up free characteristics can be improved.
本文给出了一个新的半导体器件两维数值分析程序SDA—1，该程序可对双极晶体管及MOS场效应晶体管进行有限元法两维数值分析。
A new two dimensional numerical analysis program SDA-1 is presented for semiconductor devices. It is applicable to two dimensional finite element numerical analysis of bipolar transistors and MOSFET.
本文给出了一个新的半导体器件两维数值分析程序SDA—1，该程序可对双极晶体管及MOS场效应晶体管进行有限元法两维数值分析。
A new two dimensional numerical analysis program SDA-1 is presented for semiconductor devices. It is applicable to two dimensional finite element numerical analysis of bipolar transistors and MOSFET.
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