获得了单粒子翻转和单粒子闭锁截面与入射角度的依赖关系。
The incident Angle dependences of the cross sections for single event upset and single event latchup are presented.
探讨了利用FPGA回读功能实现抗单粒子翻转的设计方法。
The paper also introduces the function of reading back configuration data from FPGA, this function can verify the Single Event Upset.
建立了中子单粒子翻转可视化分析方法，对不同特征尺寸（0。
The SEU effects of six CMOS SRAMs with different feature size(from 0.
描述了测量静态随机存取存储器质子单粒子翻转截面的实验方法。
Expermental methods were emphatically described for measuring the proton Single Event Upset (SEU) cross section in Static Random Access Memories (SRAMs).
介绍了两种已有的主从型边沿D触发器，它们具有很强的抗单粒子翻转能力。
Two typical master-slave type D flip-flop of strong hardness to Single Event Upset(SEU) for radiation environment are introduced.
依靠加速器产生的重粒子进行单粒子翻转的模拟实验，是一种有效的验证方法。
It is an efficacious method to simulate the SEU with Heavy Ion produced by Accelerator.
在实验研究的基础上，分析了应用锎源实验结果预估空间轨道单粒子翻转率的可行性。
Feasibility of prediction for single event upset rate based on 252cf experimental results in space orbits was analyzed.
用MEDICI二维模拟软件对MOSFET的单粒子翻转现象进行了计算 ，力图从理论上建立分析器件单粒子翻转的可靠手段 。
The SEU for MOSFET is simulated using the software of the MEDICI two dimensional device simulator. By the theory, a reliable approach is set up for analyzing the device?s SEU.
用MEDICI二维模拟软件对MOSFET的单粒子翻转现象进行了计算 ，力图从理论上建立分析器件单粒子翻转的可靠手段 。
The SEU for MOSFET is simulated using the software of the MEDICI two dimensional device simulator. By the theory, a reliable approach is set up for analyzing the device?s SEU.
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