阐述了热处理对辐照区熔硅单晶的影响。
This paper attempts to review the effect on FZ monocrystalline silicon by annealing.
从参考硅单晶的生长来确定参考参数的数值。
The reference parameter values are determined from the growth of a reference silicon single crystal.
仔细观测了LN和LT单晶的热电发光现象。
Pyroluminescence phenomena of LN and LT crystals were observed carefully.
本文介绍一种全凭手工切割大口径锗单晶的切片方法。
The method to slice large diameter Ge crystal by hand is shown.
本文介绍采用密闭热系统拉晶工艺拉制硅单晶的情况。
The drawing of single crystal silicon in a closed thermal system is described.
报道经大剂量x 辐射后溴化钾单晶的喇曼测量结果。
The results of Raman measurements of KBr single crystal after long X-irradiation are reported.
炉是生长大规模集成电路所需要硅单晶的专用设备。
The single crystal furnace is a special equipment of growth single crystal for LSI.
高压温度梯度法是一种有效的合成宝石级金刚石单晶的方法。
HPHT gradient temperature method is an effective technique to grow gem diamonds.
研究了样品池的厚度对大面积胶体单晶的形成速度和质量的影响。
The thickness dependent grown time and quality of the PBG of colloidal crystal were studied in this work.
应用自制的红外光弹装置，研究了直拉单晶和区熔单晶的应力分布。
Applying the infrared polariscope made by ourselves, the distribution of the stresses in crystals grown by CZ and FZ have been researched.
主要介绍探测器级特高阻区熔硅单晶的高精度微量中子嬗变掺杂技术。
The technique of high precision trace neutron transmutation doping of detector grade high resistance zone-refined Si mono-crystal is introduced.
硅中碳和氧是重要的非金属杂质，它们对硅单晶的性质有着重要影响。
Oxygen and carbon are important nonmetallic impurities in silicon crystals. Notably, the characteristics of silicon crystal are affected by them.
本发明为一种有潜在抗癌药用价值的钯配合物单晶的制备方法及其结构。
The invention is the preparation method and the structure of a palladium complex single crystal with potential anticancer medicinal value.
大直径FZ硅单晶的拉制最大困难在于高频加热设备能力和成晶工艺条件。
The most difficulty in growing FZ-Si crystal lies on the capacity of high frequency generator and technological conditions in growing crystal.
然而，与包围金刚石单晶的触媒表面相比，包膜表面碳含量低、铁含量高。
However, compared with those on the solvent metal, there exist lower carbon and higher iron contents on the film contacting diamond.
介绍了钼和钼-铌单晶的制备原理、制备工艺及电子束区域熔炼炉组成结构。
Preparing principle and preparation technology of Mo and Mo-Nb alloy single crystal and structure and component of electron beam floating zone melting are introduced.
设计了新的剪切试验件和剪切夹具，首次开展了DD 3单晶的剪切试验研究。
Researches on pure shear behaviors of DD3 single crystal are experimentally carried out for the first time.
通过实验肯定了硅单晶的化学侵蚀定向方法，找出抛光液的最佳配比及抛光时间。
Experiments are performed to confirm the chemical etching method for defining the crystallographic orientation of silicon single crystals.
介绍俄罗斯在贵金属单晶的制造、单晶性能以及有关铱单晶塑性等方面的研究状况。
The paper reported on production of noble metal single crystals, characterisation of single crystals as well as examination of iridium for the plasticity, ete. in Russia.
单晶的热电弛豫效应略小于陶瓷，在TGS和LATGS单晶中观察到了极化弛豫。
The pyroelectric relaxation effect found in single crystals is somewhat smaller than that in ceramics. The polarization relaxation is observed in TGS and LATGS crystals.
单晶的压电性能测试结果为：平面和厚度机电耦合系数分别为0.69、0.49；
The piezoelectric properties of single crystals as below: piezoelectric coupling coefficient k_p(k_t) are 0.69(0.49);
本文研究了直拉硅单晶的氧内吸杂（IG）工艺中，单晶的碳含量对缺陷形成的影响。
The influence of carbon on the defect formation during oxygen intrinsic gettering(IG) process has been studied for CZ silicon.
本文简要介绍其单晶的培育方法、光学性能及测试，对于研究新型光学材料具有一定的意义。
In this paper, the raising method of the crystal, optical properties and its mearsing method are introduced. It has a great significance for the study of new optical material.
本文从邻苯二甲酸氢钾单晶的微观结构特性，讨论了晶面上特征层状包裹形成的结构影响因素。
The formation of characteristic layered inclusions in the single crystal of potassium acid phthalate (KAP) is discussed in view of the effect of its microscopic structure.
本文全面综述了该晶体的物性与电光性能，以及多晶原料的合成与单晶的生长方法和其应用前景。
The optical, physical and electro-optical properties of ZGP single crystal, and its synthesis, growth and applications were described in detail.
对于碳酸镁铵的合成，通过查相关资料，前人仅制得该物质的粉末晶体，并未见有合成单晶的报道。
Only the powder crystal of ammonium magnesium carbonate tetrahydrate prepared was reported in previous literature, but there was no report on the synthesis of its single crystal.
结果表明：随着触媒中碳化硼添加量的增加，含硼金刚石单晶的电阻率降低，可呈现半导体电阻特性。
The results show that the specific resistance of the boron-doped diamonds significantly decreased with the increase of boron concentration and to be a semiconductor.
本文介绍了采用恒温蒸发与变更溶剂相结合生长ATGS单晶的方法，并对其生长机理作了新的解释。
The method of growing ATGS by evaporating at a fixed temperature and changing the solvent is discussed and its growing mechanism is given a new interpretation.
介绍了一种用于稀土金属提纯的单晶炉，根据区熔法提纯单晶的特殊工艺要求，分析了其主要结构及特点。
It is introduced a puller applied to purification of rare earth (RE) material, according to the float zone (FZ) technics of crystal growing, interprets main structure and characteristic of the puller.
单晶炉是生长大规模集成电路所需要硅单晶的专用设备。本文主要介绍了单晶炉的真空系统与充气系统的设计。
The single crystal furnace is a special equipment of growth single crystal for LSI. This paper mainly introduces the design of vacuum system and charge system of crystal furnace.
应用推荐