衬底预处理采用化学刻蚀和高温处理。
Chemical etching and high temperature heating were used for pretreatment of substrates.
本文的主要内容包括： （1）阐述了准分子激光电化学刻蚀硅工艺的基本原理。
The thesis comprises 3 parts: (1) The basic principle of the process is described.
本发明还公布了与光成像组合物配合使用，对玻璃，硅晶片、金属基材等进行深度刻蚀的化学刻蚀剂。
The invention also discloses a chemical etching agent matched with the compound to take deep etch to glass, silicon water and metal material.
YG8硬质合金经稀硝酸水溶液化学侵蚀后，表面一定深度内的粘结相钴将被化学刻蚀掉，引起表层疏松。
Cobalt phase was chemically etched to certain depth beneath the surface and porous layer was formed after YG8 cemented carbide had been soaked in aqueous solution of dilute nitric acid.
本文提出了一种基于“沾笔”纳米刻蚀和电化学还原技术在表面上制备金属及半导体纳米结构的普适性方法。
A general approach for fabricating metallic and semiconducting nanostructures has been developed based on "dip pen" nanolithography combined with electrochemical reduction of water soluble salts.
采用铬酸刻蚀和化学气相沉积聚吡咯处理了超高相对分子质量聚乙烯(UHMWPE)纤维。
UHMWPE fiber were treated by chromic acid etching and chemical vapor depositing polypyrrole (PPy).
利用低温等离子体处理纤维可以在纤维表面形成刻蚀、改性等物理化学变化，但对纤维自身的性能也有所影响。
The fibers treated with low-temperature plasma, have some physical and chemical change in the surface of the fiber such as carving, modification. But there are affections in fibers' properties.
首先，采用紫外光刻和化学湿法刻蚀技术在玻璃基片上加工微米深度的微通道；
The microchannels were firstly constructed on a glass substrate by standard UV photolithography and wet etching technique.
利用该等离子体在优化的气压条件下对化学气相沉积金刚石膜进行了刻蚀， 并研究了刻蚀机理。
The etching of CVD diamond thick films was accomplished by the ECR plasma under optimized pressure conditions and the etching mechanism is studied.
采用铬酸刻蚀和化学气相沉积聚吡咯处理了超高相对分子质量聚乙烯（UHMWPE）纤维。
The surface of ultra high molecular weight polyethylene(UHMWPE)fibers was modified by the confected chrome acid treatment solutions.
利用电子束光刻、等离子体增强化学气相沉积、感应耦合等离子体刻蚀来实现跑道型微环谐振器的制备；
The optical part can be done by applying Electron Beam Lithography (EBL), Inductively Coupled Plasma (ICP) etching, and Plasma-enhanced Chemical Vapor Deposition (PECVD).
微型加工的静态混合器只有22mm2大，由硅片刻蚀而来，可用于小型化学传感器。
Micro-machined static mixers only 22mm2, etched from silicon wafers, can be used for small chemical sensors.
微型加工的静态混合器只有22mm2大，由硅片刻蚀而来，可用于小型化学传感器。
Micro-machined static mixers only 22mm2, etched from silicon wafers, can be used for small chemical sensors.
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