还有他们具有，一定能量克服势垒的概率。
And what the probability is of their getting enough energy to go over the barrier.
速率依赖于，翻越势垒。
势垒的涨落由指数关联的高斯色噪声描述。
The barrier fluctuation is characterized by Gaussian colored noise with exponential correlation.
计入了有限高势垒效应。
新增高能态是通过注入式势垒旁第一个量子阱来创建的。
The additional upper state is created by a first quantum well adjacent to the injection barrier.
金属中的电子必须克服这个势垒层才能进入半导体。
Electrons from the metal will have to surmount the potential barrier to enter the semiconductor.
氟代甲酰胺的氢迁移势垒低于甲酰胺的氢迁移势垒。
The potential energy barriers of hydrogen migration of the N-fluoro-formamide are lower than that of formamide.
还利用原子缺陷势垒模型对几种老化现象进行了理论分析。
The aging mechanisms were investigated by using atomic defect barrier model.
通过分析钌基厚膜应变电阻的隧道势垒模型，提出力敏模型。
We constructed a strain sensitive model through the analysis of the Ru-based thick film strain resistors tunneling barrier model.
蓝失谐的激光束相对于冷原子而言等效于一个量子力学势垒。
The blue detuned laser beam is physically equal to a quantum potential barrier.
研究了镧掺杂对漏电特性的影响，以及肖特基势垒电流模型。
The effects of Lanthanum doping on leakage current characteristics were also studied by Shottky model.
研制了三类不同金属和III族氮化物接触的肖特基势垒二极管。
Schottky barrier diodes with different metal on III nitride have been fabricated.
实验表明该膜有良好的肖特基势垒特性和对硅器件的表面钝化作用。
The experiment results show that the Schottky barrier properties and the surface passivation actions to silicon devices of the films are good.
膜的可蚀性及肖特基势垒的热稳定性能够满足自对准栅IC的要求。
The etched ability of the films and the high temperature stability of the Schottky barrier satisfy the requirements of SAG ICs.
发现表面高密度缺陷减薄了势垒层厚度，显著增强了热电子隧穿过程。
It is found that the barrier width is thinned by the surface defects with high density to enhance the hot electron tunneling.
该缺陷的俘获势垒值的大的分布解释为缺陷周围原子重组的微观波动。
The distribution can be interpreted as the microscopic fluctuation of atomic arrangements around the defect.
由此，设计了一种基于这种双势垒磁性隧道结隧穿特性的自旋晶体管。
We designed a few kind of spin transistors based on the spin_dependent resonant tunneling effect of the DBMTJs.
采用宏观连续介质模型研究了极性半导体双势垒结构中界面光学声子模。
The interface optical (IO) phonon modes in double barrier structures of polar semiconductor are studied with the macroscopic dielectric continuum model.
最后，本文采用叠加势垒模型对晶界电子势垒的特性进行了很好的描述。
Finally, the characteristics of grain boundary electron barrier were described properly with superimposed barrier model.
计算并讨论了所加电压与界面势垒对器件的复合电流及其复合效率的影响。
The influences of applied bias and interface barriers on carriers recombination and its efficiency are calculated and discussed.
理论研究了非对称双势垒结构中光学声子发射率和光学声子辅助隧穿电流。
The phonon emission rate and the phonon assisted tunneling (PAT) current in an asymmetric double barrier structure are theoretically studied.
用X射线双晶衍射仪扫描并分析了典型双势垒RTD样品的衍射摇摆曲线；
The results of double crystal X, ray diffraction measure of typical double barrier RTD material were given.
但是由于较高的库仑势垒和离心势垒，丰质子轻核比较难以形成质子晕结构。
The high Coulomb and centrifugal barriers make it difficult for light proton-rich nuclei to possess halo structure.
认为电极与材料的接触势垒和材料内部空间电荷影响着材料的电致发光特性。
It is primarily considered that, the contact barrier between electrode and material and the space charges inside polymers greatly affect their el characteristics.
结果表明，活化势垒太高，反应很难进行，所以单个钯原子不具有催化活性。
The results indicate that a single atom of Pd is unavailable for catalysis owing to its too high activation energy.
用单载流子器件模拟表明ITO经高频放电处理后降低了器件界面的空穴注入势垒。
Analogy of hole injection barrier indicates that the interface barrier of ITO is lowered after being treated with the high frequency discharge method using hole-only devices.
采用梯形势垒模型计算伏安特性，并与实验伏安特性拟合，得到了结的有效势垒参数。
Effective barrier parameters were obtained by fitting the theoretical curves based on the trapezoidal barrier potential model to the experimental ones.
我们发现通过有限势垒耦合的双量子线在磁调制下可以用作为电子能量过滤器和分流器。
It is found that the double quantum wires coupled by a finite barrier can be an energy filter and current divider.
肖特基势垒整流器。最大重复峰值反向电压50V最大平均正向整流电流8.0A。
Schottky barrier rectifier. Max repetitive peak reverse voltage 50 V. Max average forward rectified current 8.0 a.
在该模型的基础上，讨论了势垒、阳极结的电势降落和电流的放大因子等电参数的变化。
Based on the model, the variations of the electrical parameters such as the potential barrier, the anode junction voltage drop, and the current amplification factor are studied and discussed.
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