• 直接测定了铝电解质实际样品的初晶温度。

    Liquidus temperature of actual aluminum electrolyte samples was measured directly.

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  • 而使高硅铝合金充分发挥实用价值的关键是细化初晶硅。

    The value of hypereutectic Al Si alloys is their fine primary silicon particles.

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  • 在初晶温度较低的电解质中,铝的溶解度较低,反之较高。

    For electrolyte system with lower liquidus temperatures, the solubility of aluminium was lower too, vice versa.

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  • 当磁场强度不变,随着磁场梯度的增大,初晶硅的偏聚量增加,晶粒尺寸变小。

    The amount of segregated primary silicon grains increases with increasing magnetic gradient, whereas the grain size decreases.

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  • 随着变质温度的升高,稀土对初晶硅的变质作用加强,而对共晶硅的变质作用减弱。

    With the increase of modifying temperature, the modification of rare earth Pr enhances on primary silicon, fades on eutectic silicon.

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  • 主要研究了初晶温度、过热度、电解质组成,以及电解质融化之后的熔盐深度对铝溶解度的影响。

    Influence factors, such as liquidus temperature, superheat degree, electrolyte components, and the depth of molten salt were focused.

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  • 系统的输入参数除传统的电压、温度和分子比外,还采用初晶温度、过热度和阴极压降等作为系统的输入参数。

    Besides the cell voltage, bath temperature and bath ratio, the inputs of the system also include the liquidus temperature, superheat extent and cathode voltage.

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  • 研究结果表明:1. P - RE复合变质对过共晶铝硅合金的初晶硅和共晶硅都具有良好的变质和细化作用。

    The result indicated that: 1. P-RE combination modification can modify both the eutectic Si and primary Si of the hypereutectic Al-Si alloy at the same time.

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  • 在初晶相为鳞石英的平板玻璃中加入千分之几的P_2O_5后对析晶性能的影响与初晶相为硅灰石的平板玻璃是不同的。

    The effect of addition of P_2O_5 in a few thousandths on the devitrification behavior of plate glass with primary phase of tridymite is different from that with primary phase of wollastonite.

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  • 通过调整氟化铝添加量、出铝量和设定电压,以及氧化铝下料间隔的自修正,实现对电解槽温度、初晶温度、效应系数的控制。

    The bath temperature, liquidus and anode effect were controlled by adjusting the AlF3 additions, aluminum tapping magnitude, cell voltage set-point and the alumina feeding interval.

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  • 通过调整氟化铝添加量、出铝量和设定电压,以及氧化铝下料间隔的自修正,实现对电解槽温度、初晶温度、效应系数的控制。

    The bath temperature, liquidus and anode effect were controlled by adjusting the AlF3 additions, aluminum tapping magnitude, cell voltage set-point and the alumina feeding interval.

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