本发明的可控硅触发电压低，能在相应范围内自由调整且具有高热击穿电流。
The present invention has low trigger voltage of SCR, can adjust freely in corresponding range and has hyperpyrexia breakdown current.
正如图1所示，而从电压Uc开始，漏电电流迅速增加，击穿电压达到Ue。
As shown in Diagram 1, as from the voltage Uc, the leakage current increases very swiftly and the breakdown voltage is reached for value ue.
为研究轴承电流产生机理及存在形式，建立模拟轴承内部接触和轴承油层击穿的轴承模型。
A bearing model for investigating the mechanism and form of bearing current is proposed, which simulates the bearing interior contact and oil layer breakdown.
特点：击穿电压高，电流特性好。
Features: High breakdown voltage, excellent current characteristics.
过电流保护装置：试样击穿时在0.1S内切断电源。
Over current protection device: when the sample breakdown in the 0.1s cut off the power.
得到了放电击穿时间、放电峰值电流随充电电压、不同气体介质变化的曲线；
The discharge breakdown time, peak current as a function of charge voltage and buffer gas are obtained.
当二极管反向偏置时，仅有很小的、可忽略的漏电流流过，除非是达到反向击穿电压。
When the diode is reverse biased, only a negligibly small leakage current flows through the device until the reverse breakdown voltage is reached.
在重点考虑了提高击穿电压和增大电流容量的基础上，设计并研制出功率型dubat。
The power dual base transistor (DUBAT) has been designed and fabricated by increasing the breakdown voltage and current capacity of the device.
根据电流传输机构，本文提出一种考虑了电荷积累、陷阱密度及其重心位置的击穿模型。
According to the mechanism of current transport, we suggest a breakdown model in which charge accumulation, trapping density and position of its center of gravity are all considered.
针对栅氧化层击穿otp存储单元提出了可行的阵列结构和电流敏感放大器。
For gate oxide breakdown OTP memory, we present a viable NOR array structure and current sense amplifiers.
系统能够自动判别试样击穿并采集击穿电压数据及泄露电流，同时能够在击穿的瞬间电压迅速降低自动归零。
The system can automatically determine the sample breakdown and collect the breakdown voltage data and leakage current, and can quickly reduce the automatic return to zero at the same time.
如果使用高压，则需要利用限流电阻，以免被测装置击穿后损坏电流开关。
If high voltage is used, current limiting resistors are needed to avoid damage to the current switches in case the device under test breaks down.
结果发现：在电流过零处，等离子体未完全熄灭，使得电流转换后不需要第二次击穿。
The results show the plasma density is not completely lost during current reversal, therefore, there were no need for second breakdown after the current reversal.
由于金属杂质原子扩散并沉积在器件的有源区，会造成诸如：反向漏电流较大，反向击穿电压是软击穿等有害的影响。
High leakage currents and soft reverse current-voltage characteristics are some of the detrimental effects produced by the metal atoms dissolved in the silicon matrix.
电线电缆电压试验中的“假击穿”现象主要是由高压试验设备的限定动作电流太小造成的。
The phenomenon "False Hitting" in the experiment of wire, cable and voltage was mainly caused by the small, fixed motion electrical current of high voltage experimental facilities.
模拟结果解释了实验观察到的雪崩击穿现象，并表明电子电流比空穴电流提前饱和。
The results explain the experimental observed phenomenon and demonstrate that the current contributed by electrons is saturated earlier than the hole current.
因此可以提高击穿电压和可以降低漏电流。
Accordingly, a breakdown voltage can be increased and a leakage current can be reduced.
经过这样处理后的器件，漏极射频电流损失小，器件击穿电压和输出功率得以提高。
The device treated by the process is of small loss of drain radio-frequency current and increased electric breakdown strength of device as well as delivered power.
软击穿时间由衬底电流随时间的弛豫特性和器件输出特性测量时监测的衬底电流突变确定。
The time to soft breakdown (t BD ) is obtained by the relaxation characteristics of the I sub with time and by monitoring the breaks of the I sub when measuring the output characteristics.
模拟分析表明 ，采用该结构 ，器件的雪崩击穿电压能提高到理想平行平面结的 90 %以上 ，器件的大电流特性和频率特性也有所改进 。
The simulation analysis indicates that with this structure the avalanche breakdown voltage of RF power transistors can be increased to be over 90% of that for an ideal parallel .
如果这发生得过快或过于突然，则IGBT开关将由于导通瞬间的过度的电流和功率耗散而击穿。
If this happens too soon or too abruptly, the IGBT - switch will break down due to excess current and power dissipation at the moment of switch-on.
辐照后基极电流、结漏电流增大，集电极电流、击穿电压减小。
The base current and the junction leakage current increase, while the collector current and the breakdown voltage decrease for SiGe HBTs after radiation.
因此，电容器C4(穿过电阻器R2和IGBTQ2)的充电电流也受到限制，由此不会有部件被击穿。
Hence, the charging current of capacitor C4 (running through resistor R2 and IGBT Q2) is also limited so that no components can break down.
本系统能够自动判别试样击穿并采集击穿电压数据及泄露电流，同时能够在击穿的瞬间电压迅速降低自动归零。
The system can automatically distinguish the sample breakdown and breakdown voltage andleakage current data acquisition, and can rapidly reduce auto zero at the moment of the voltage breakdown.
分析了不同电源条件下的弧后电流。文中指出，扩散型真空电弧的分断极限是由电击穿决定的，而不由弧后电流引起的热击穿所定。
It has also been found that diffused vacuum arcs with a high current gives a low post-arc current and that the limitation to the breaking capacity for dif…
当高电流密度引起电极上气体析出失控时，便会发生击穿。 气体的产生消耗电流引致泳透力下降，则不可能使隐蔽表面涂上漆。
Throwpower drops off as current is consumed in the production of gas and is not available to permit the covering of recessed areas.
当高电流密度引起电极上气体析出失控时，便会发生击穿。 气体的产生消耗电流引致泳透力下降，则不可能使隐蔽表面涂上漆。
Throwpower drops off as current is consumed in the production of gas and is not available to permit the covering of recessed areas.
应用推荐