比较了外延生长参数，如生长温度、生长压强、碳硅比和气流流速，与生长率和净载流子浓度的影响关系。
The influence of growth parameters including gas flow, C/Si ratio, growth temperature and pressure on growth rate and layer uniformity in thickness and doping are discussed.
比较了外延生长参数，如生长温度、生长压强、碳硅比和气流流速，与生长率和净载流子浓度的影响关系。
The influence of growth parameters including gas flow, C/Si ratio, growth temperature and pressure on growth rate and layer uniformity in thickness and doping are discussed.
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