每个所述芯片具有覆盖在所述氮化硅层和所述栅极结构上的具有预定厚度的共形的掺杂硅玻璃层。

Each chip is provided with conformal doped silicon glass layers which are covered on the silicon nitride layer and are covered on the gate structure and which have predetermined thickness.

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每个所述芯片具有覆盖在所述氮化硅层和所述栅极结构上的具有预定厚度的共形的掺杂硅玻璃层。

Each chip is provided with conformal doped silicon glass layers which are covered on the silicon nitride layer and are covered on the gate structure and which have predetermined thickness.

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