重点讨论了ITO膜的光电性能和当前的研究焦点。
Photoelectric properties and investigation focus of ITO film are emphasized.
水分和氧气的渗透是影响器件光电性能的重要因素。
The permeance of water vapor and oxygen were important index whichinfluence the optical and electrical characteristics of the device.
这种新颖的纳米结构，可能具有特殊的物理，化学与光电性能。
This novel silver structure is expected to behave fascinating properties of chemistry, physics and electronics.
因此，OLED的结构优化是改善器件光电性能的一个关键因素。
Therefore, the key to the improvement of OLED device performance lies in optimizing its structure.
分析结果表明：电子泄漏与能带填充是影响光电性能的主要原因。
The results show that the electron leakage and band filling are the main reason for impacting photovoltaic performance.
研究结果表明温度是影响大功率发光二极管光电性能的主要因素。
The results showed that temperature is the main factor to influence the photoelectricity property of high power white LED.
通过对其光电性能的分析测试，探讨了溅射温度对氧化钛薄膜性能的影响。
Through testing and analysing on the optoelectronic properties of them, effects of sputtering temperature on TiOx thin films were discussed.
采用紫外-可见吸收光谱、荧光光谱和循环伏安法研究了该配合物的光电性能。
Its UV-Vis absorption spectrum, fluorescence spectrum and cyclic voltammetry were studied for photoelectric properties.
从读出集成电路结构、封装、可操作性和光电性能入手对该探测器进行了介绍。
The detector is described in terms of ROIC architecture, packaging, operability and electro-optical performances.
同时通过分析敏化前后薄膜的成分，探讨了薄膜敏化后光电性能大幅度提高的机理。
In the meantime, the reasons why the photoelectric properties were greatly improved after sensitization have been discussed by analyzing the composition of films.
采用PLD方法制备gzo薄膜，衬底温度的改变可以对薄膜的光电性能起到调制作用。
Our results exhibit that the optical and electrical properties of GZO thin films prepared by PLD method can be adjusted by the change of substrate temperature.
研究外磁场下酞菁薄膜取向生长的规律性；研究磁场下生长的酞菁膜及复合膜的光电性能。
Oriented growth of the MPC films will change the stacking mode of the molecules, which will in turn modify the properties of the films.
酞菁铜是一种重要的多功能高分子材料，其良好的光电性能，正越来越引起人们广泛的研究。
Copper phthalocyanine is an important versatile organic material. It has attracted more and more attention because of its unusual photoelectric properties.
采用各种分析手段研究了沉积温度和真空退火处理对薄膜结构、表面形貌及光电性能的影响。
The effects of substrate temperature and post deposition vacuum annealing on structural, electrical and optical properties of ZMO: ga thin films were investigated.
异质结因其优异的电子输运特性和光电性能而被广泛地应用在通信、微电子及光电子等领域。
Heterojunction has been widely used in communications, microelectronics and optoelectronics and other fields for its excellent electronic transport properties and optical properties.
综述了透明导电氧化物（TCO）薄膜的结构、光电性能以及TCO薄膜制备技术的研究进展。
Progresses in research on microstructure, electrical and optical properties and preparation technology of TCO thin films are reviewed.
纳米硅薄膜具有独特的结构和许多优异的光电性能，可望应用于新型光电器件、大规模集成电路等领域。
Nanocrystalline silicon films have special structure and many excellent optoelectronic properties, and are supposed to be applied in optoelectronic devices and large scale integrated circuits.
研究结果表明，三芳胺化合物的结构类型、取代基的性质、个数和位置对其光电性能均有不同程度的影响。
The results indicated that the type of the triarylamine, the property, number and locality of the substitutes have influences on the transportation of the carriers.
芴酮衍生物作为电子传输材料在有机光导体(opc)器件上已投入使用，并且对它们的光电性能已有研究。
Fluorenone derivatives have been used as electron transporting materials in organic photo conductor (OPC) device and their electric and optical properties were studied.
本文主要介绍了AZO薄膜的晶体结构、导电机理、光电性能、典型制备技术和应用现状，并对其研究前景进行了展望。
In this paper, the structure, electric mechanism, photoelectric properties, typical preparation techniques and recent progress of AZO films are mainly described.
同时由于SOG材料具有突出的光电性能，在太阳能电池和液晶显示器等光电设备中也有着广泛的应用，引起了人们越来越广泛的关注。
Furthermore, SOG has extensive applications in photovoltaics devices such as solar cell and liquid crystal display for prominent photovoltaics property, and SOG has induced more and more attention.
首先，因为阳光是弥漫性能量来源，光电面板需要尽可能成本低廉的大面积铺开。
First, because sunlight is a diffuse energy source, they need to spread out over a large area as cheaply as possible.
另一个问题是使用寿命的问题，利德泽说，硅材料光电板的使用寿命一般为20年左右，而且性能比较稳定。
Problems also remain with operational lifetime. Silicon devices will generally last around 20 years and are very stable, Lidzey says.
采用光纤激光器作为光源，性能稳定，光电转换效率高，能耗低。
Using the fiber laser as light source, Stable performance, High photoelectric conversion efficiency, Low energy consumption.
本文将讨论微型CMOS电视摄像机作为图像传感器在实时光电位移测量时的处理电路及性能分析。
This paper discusses the processing circuit and features of the CMOS miniature camera used as a graphic sensor in the real time photoelectric displacement measurement.
光电反馈线路采用普通的砷化镓光电导开关，具有结构简单、性能可靠的优点。
The feedback circuit employs a GaAs photoconductive switch, which has simple structure and reliable performance.
跟踪精度是机载光电成像跟踪系统的重要性能。
Tracking precision is an important performance of airborne photoelectric imaging tracking system.
CCD(电荷耦合器件)是一种高性能的半导体光电器件，近年来在医院、工业检测等领域里得到了广泛的应用。
CCD (Charge Coupled device) is a high performance semiconductor photoelectric device, and is widely applied to hospital, industrial detection and so on.
因此，合理地调整膜面孔径的尺寸对获得较强的光电转换性能是必要的。
Therefore, the photoelectric conversion properties can be improved by optimizing the pore size.
因此，合理地调整膜面孔径的尺寸对获得较强的光电转换性能是必要的。
Therefore, the photoelectric conversion properties can be improved by optimizing the pore size.
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