介绍了用强-强模型对合肥光源电子储存环中离子俘获不稳定性产生机制进行的模拟研究。
In this paper, the simulation methods and results of ion-trapping instability using strong-strong model were introduced for the HLS ring.
在电子储存环中，由于被束流势阱俘获的离子会引起束流不稳定性。
The ions trapped by beam potential well can cause beam instability in electron storage rings.
在电子储存环中，由于被束流势阱俘获的离子会引起束流不稳定性。
The ions trapped by beam potential well can cause beam instability in electron storage rings.
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