掺杂能明显改变二氧化钒薄膜的相变温度，影响其电学和光学性质。
Phase transition temperature (Tc) of VO2 thin films was changed obviously by doping methods and then the electrical and optical properties were influenced.
介绍了一种针对二氧化钒敏感材料的CMOS读出电路(RO IC)。
A complementary metal oxide semiconductor (CMOS) readout integrated circuit (ROIC) for the sensitive material of vanadium dioxide (VO_2) was introduced.
通过查阅国内外文献，从不同角度对二氧化钒纳米粉体和薄膜的各种制备方法进行综述，并报道了其相关应用。
The preparation methods of vanadium dioxide nanopowders and thin film were reviewed, The application of VO_2 are given. There will be a good developing prospect in VO_2 nanopowders and thin film.
以二氧化铈和偏钒酸铵为原料，微波加热快速合成了钒酸铈。
Ceria and ammonium meta vanadate were selected as the feedstock, with microwave heating cerium vanadate was obtained in short time.
以二氧化铈和偏钒酸铵为原料，微波加热快速合成了钒酸铈。
Ceria and ammonium meta vanadate were selected as the feedstock, with microwave heating cerium vanadate was obtained in short time.
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