当二极管反向偏置时，仅有很小的、可忽略的漏电流流过，除非是达到反向击穿电压。

When the diode is reverse biased, only a negligibly small leakage current flows through the device until the reverse breakdown voltage is reached.

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但就制备高反向击穿电压的微波pin二极管而言，这些工艺已不能满足要求。

But as concerning microwave PIN diode of high breakdown voltage, the craft can't already meet the demands.

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稳压二极管。工作电压(名称)180 V。瞬态抑制二极管。反向击穿电压168V。

Voltage regulator diode. Working voltage (nom) 180 V. Transient suppressor diode. Reverse breakdown voltage 168 v.

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稳压二极管。工作电压(名称)180 V。瞬态抑制二极管。反向击穿电压168V。

Voltage regulator diode. Working voltage (nom) 180 V. Transient suppressor diode. Reverse breakdown voltage 168 v.

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