结果表明扩散系数和扩散距离都随着负衬底偏压的增大而增大。
The results showed that diffusion coefficient and diffusive distance increased with raising of negative substrate bias.
当少子扩散长度与衬底厚度的比值为2.5-3时，具有铝背场结构的单晶硅电池可获得最佳的输出特性。
When the ratio of minority carriers'diffusion length to the substrate thickness is about 2.5 to 3, the crystalline silicon cells with an Al-BSF can gain the optimal output performance.
结果表明扩散系数和扩散距离都随着负衬底偏压的增大而增大。
The deposition rate increases with the increasing of bias voltage pressure.
结果表明扩散系数和扩散距离都随着负衬底偏压的增大而增大。
The deposition rate increases with the increasing of bias voltage pressure.
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