实验结果与纯铜和纯铍的渗透率相比较，并按照氧化铍的表面势垒作用对渗透行为的影响进行了讨论。
The experimental results were compared with the permeation rate of pure cu and Be, a discussion on the function of the surface barrier was also made.
实验表明该膜有良好的肖特基势垒特性和对硅器件的表面钝化作用。
The experiment results show that the Schottky barrier properties and the surface passivation actions to silicon devices of the films are good.
发现表面高密度缺陷减薄了势垒层厚度，显著增强了热电子隧穿过程。
It is found that the barrier width is thinned by the surface defects with high density to enhance the hot electron tunneling.
发现表面高密度缺陷减薄了势垒层厚度，显著增强了热电子隧穿过程。
It is found that the barrier width is thinned by the surface defects with high density to enhance the hot electron tunneling.
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