富士通公司指出使用氮化镓高电子迁移率晶体管技术后，新型放大器功率比目前使用砷化镓晶体管的放大器的功率提高了6倍多。
Fujitsu points out that using GaN HEMT technology allows more than 6 times the output power of existing amplifiers using gallium-arsenide (GaAs) transistors.
他提议，将这橡胶基片用沟槽分割为正方形的小方格，当这橡胶伸缩的时候，就可以将那些极微小的刚性砷化镓片转移到小方格中。
He proposes dividing a rubber substrate into squares separated by trenches, and transferring tiny islands of rigid gallium arsenide onto those squares when the rubber is stretched.
他们只是想通过在砷化镓晶体上钻一些有着细心安排间距的小孔来制造波导（一种能令光传播到特定方向的结构）。
They wanted to build a waveguide, a structure designed to send light in a particular direction, by drilling carefully spaced holes in a gallium arsenide crystal.
结果表明砷可能通过减少氟的吸收及氟在组织蓄积而减轻氟对机体骨等矿化组织的损害作用，但这种拮抗作用很弱。
It indicates that arsenic may reduce the effect of fluoride on tooth and bone by reducing the absorption and cumulation of fluoride in the body.
本文讨论了砷化镓单片微波集成电路的优缺点、工艺特点、应用领域和今后展望。
The advantages and disadvantages, technological features, application fields and prospect of GaAs monolithic microwave integrated circuits are discussed in this paper.
本文详尽地讨论了砷化镓超突变结变容二极管的设计原理和方法。
In this paper, the design principles and methods of the super-abrupt junction GaAs varactor diode has been discussed.
探讨了复合孕育剂中铝量对含砷、锡、铅、钛铸铁石墨球化的影响。
An approach to the influence of aluminium content of inoculant on graphite spheroidization of cast iron containing as, Sn, Pb and ti was made.
一个具有同轴双反光碗的新型结构的砷化镓红外探照灯在1985年正式使用于警用红外夜视仪中。
GaAs infrared searchlight with novel structure of a coaxial double reflective bowls was used in 1985 for police night vision device.
亚砷酸车间的生产控制采用仪电一体化设计，所有电气设备、机组和阀门均在DCS上自动控制或远方遥控操作。
The production of arsenic trioxide is controlled by electrics and instrument, with all electrical equipment, units and valves automatically controlled by DCS or remote operation.
中国快速工业化过程中的开矿等行为，使镉、砷、汞等有害重金属释放到自然界。
Mining and other activities during China's rapid industrialization have led to the release of hazardous heavy metals, such as cadmium, arsenic and mercury, into nature.
磷化氢和砷化三氢对紫外光的吸收比硅烷强烈得多，因此，它们就沉积在容器的器壁上。
The phosphine and arsine absorb the ultraviolet light much more strongly than does silane, causing them to be deposited out on the walls of the container.
本方法的步骤为：（1）将含砷烟尘或含砷溶液与计量的石灰混合搅拌浆化；
The method comprises the following steps of: (1) mixing and stirring the arsenic-containing smoke dust or solution with weighed lime to make slurry;
根据砷化镓半导体的光吸收特性，设计了一种新型的发电转子温度测量系统。
A new kind of generator rotor temperature measuring system is designed based on optical absorption behavior of GaAs semiconductor.
常用的本质半导体是硅、锗以及砷化镓等的单晶。
Some common intrinsic semiconductors are single crystals of silicon, germanium, and gallium arsenide.
根据砷化镓半导体的光吸收特性，设计了一种新型的发电转子温度测量系统。
A new kind of generator rotator temperature measuring system is designed based on optic absorption theory of GaAs semiconductor.
金的富集与金属硫(砷)化物关系密切，毒砂是其主要载金矿物。
The gold enrichment is closely connected with metal sulfide (or arsenide). And arsenopyrite is the main gold-bearing mineral.
用电子显微镜研究了压痕诱发砷化镓单晶中的塑性变形。
Plastic deformation induced by indentation in a GaAs single crystal was investigated using electron microscopy in the present experiment.
报道了利用离子注入技术研制出一种用于手机的超低插损砷化镓单片射频单刀双掷开关。
An ultra low insertion loss GaAs MMIC RF SPDT switch based on full-ion-implantation technology is reported.
评述砷化镓中硅SIMS定量分析的进展，讨论了相对灵敏度因子法。
The development on quantitative analysis of si in GaAs by SIMS is reviewed critically. Therelative sensitivity factor (RSF) method is discussed in detail.
砷化三氢的反应是典型的掺杂化学反应，图9显示了该反应的淀积过程。
Typical of the dopant chemistry is the reaction for arsine, which is depicted with the deposition process in Fig. 9.
集成电路和各种半导体器件制造中所用的材料，目前主要是硅、锗和砷化镓等单晶体，其中又以硅为最多。
Silicon, germanium and gallium arsenide are popular materials used in ICs and semi-conduct devices, while silicon is the most popular one.
Luxtera的设计消除了使用昂贵的III - V化合物半导体材料(如砷化镓和磷化铟)的必要。
Luxtera's design eliminates the need to use expensive group iii-v compounds, such as gallium arsenide (GaAs) and indium phosphate (InP), in the semiconductors.
光电反馈线路采用普通的砷化镓光电导开关，具有结构简单、性能可靠的优点。
The feedback circuit employs a GaAs photoconductive switch, which has simple structure and reliable performance.
使用更高效的半导体，比如砷化镓，也是一种选择，虽然除了NASA没人用的起。
Using more efficient semiconductors, such as gallium arsenide, which is currently too expensive for anyone except NASA, is another.
本文讨论了砷化镓双栅场效应管在电视接收机UHF频道选择器中作高频调谐放大和变频应用时的一些考虑，并给出有关的实验结果。
This paper goes into the application of the GaAs Dual-Gate FET to the high frequency tuning-amplification and frequency conversion in a TV UHF channel selector and gives some experimental results.
我们所讨论的光源是一个纳米级的激光，它通过一个砷化镓芯片发射光线，如下图。
The light source in question is a nanoscale laser, which beams light through a gallium arsenide chip, as shown below.
为了使砷化镓场效应管具有建立振荡所需的负阻，我们将其配置为共源结构并在漏极添加合适的开路微带线。
In order to make the GaAs FET having the required negative resonator to oscillator, we use the common source configuration and add the appropriate drain open stub microwave line.
本文围绕射频集成电路中应用的无源硅基片上螺旋电感和有源器件砷化镓高电子迁移率晶体管进行了相关的研究，得到了一些新的结果和新的建模方法。
This paper focuses on the modeling of the passive silicon-chip spiral inductors and active GaAs HEMT, and obtains some new results and new modeling method.
砷化镓晶片生产过程中，产生大量废水，其中主要污染物是悬浮状态的砷化镓微粒。
A great deal of wastewater was produced in the manufacturing of gallium arsenide wafers, and the main contamination was gallium arsenide particles in suspension.
模拟衰减器在射频和微波网络中有广泛的应用，可用砷化镓mmics和PIN二极管网络实现。
Simulant attenuator has been widely applied in microwave and radio networks with MMICS and PIN diode networks.
应用推荐