管芯研究结果表明，在适当的退火条件下，离子注入掺杂制备浅结是改善器件特性较为理想的方法。
Test results show that the preparation of shallow junctions by ion implantation with proper annealing is an ideal technique for improvement in the device performances.
通过实验发现高阻衬底浅结的紫外敏感硅光伏二极管的正向偏置c -V特性和I - V特性与一般PN结二极管的正向特性有明显地不同。
It's shown that the C-V and I-V characteristics of silicon photovoltaic diode by forward bias are obviously different from forward characteristic of common PN junction diode by experiment.
本文对多晶硅膜离子注入掺杂和扩散掺杂制备浅发射结进行了实验研究。
An experimental study has been carried out on the doping of polysilicon by ion implantation and diffusion for the preparation of shallow junctions.
本文对多晶硅膜离子注入掺杂和扩散掺杂制备浅发射结进行了实验研究。
An experimental study has been carried out on the doping of polysilicon by ion implantation and diffusion for the preparation of shallow junctions.
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