制备了含两层绝缘层的双势垒结构隧道发光结，介绍了其结构特点，分析了电子在结中的共振隧穿特性。
The double-barrier light emission tunnel junctions have been fabricated. The characteristics of electronic resonant tunneling with the junctions have been analyzed.
讨论了硅基双势垒金属绝缘层金属绝缘层半导体 （MIMIS）隧道发光结的结构、制备方法及发光特性。
The structure, fabrication technology and light emission properties of double barrier MIMIS tunneling junction are discussed.
在MIM隧道发光结的研究过程中，结的发光是SPP快模还是慢模起主要作用，一直是许多学者争论的主题。
In the study of MIM tunnel light-emission junctions, whether SPP (surface plasmon polariton) "fast" mode or SPP "slow" mode holds more important role is always a main topic.
然而，隧道结中的分子由于离金属表面很近，其发光受到荧光淬灭作用的强烈制约。
However, light emission from molecules near metals is challenging due to the fluorescence quenching effect.
异质结器件的发光效率与亮度较单层器件提高1个数量级以上。
The luminescent brightness and efficiency are enhanced at least 1 magnitude order.
计算结果表明在单异质结电致发光器件中，可降低器件的电流水平，提高器件的发光效率。
The enhancement of the minority results in the improvement of luminescent efficiency with the reduction of majority injection resulting in the falling of current level.
计算结果表明在单异质结电致发光器件中，可降低器件的电流水平，提高器件的发光效率。
The enhancement of the minority results in the improvement of luminescent efficiency with the reduction of majority injection resulting in the falling of current level.
应用推荐