杂质掺杂多晶硅层设置于两绝缘区与反熔丝上。
An impurity doped polysilicon layer is defined over the two insulator regions and the anti-fuse.
所述集成电路包括具有二极管及与所述二极管连通的反熔丝的存储器单元。
Such integrated circuit includes a memory cell with a diode and an antifuse in communication with the diode.
在编程此反熔丝一次可编程非易失存储器单元后，已编程的区域(例如为连结)可作为二极管，其形成于反熔丝上。
A programmed region, i. e., a link, functioning as a diode, is formed on the anti-fuse after the anti-fuse OTP nonvolatile memory cell is programmed.
详细介绍了反熔丝fpga在提高密码芯片速度和对密码算法进行保护方面的应用，并给出了密码算法芯片中部分模块的实现方法。
Antifuse FPGA used in improving velocity of cipher chip and protecting cipher algorithm is introduced in this paper. Implementation of modular in chip is presented.
详细介绍了反熔丝fpga在提高密码芯片速度和对密码算法进行保护方面的应用，并给出了密码算法芯片中部分模块的实现方法。
Antifuse FPGA used in improving velocity of cipher chip and protecting cipher algorithm is introduced in this paper. Implementation of modular in chip is presented.
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