通过反应离子刻蚀可以将光刻胶微透镜图形转移至这种高性能的聚合物材料上。
Pattern transfer technique is used to transfer photoresist microlens arrays into the polymer underlayer.
衍射光学元件的制作技术主要包括激光或电子束直写、反应离子刻蚀、离子束铣及薄膜沉积。
DOE's fabrication techniques mainly include laser beam or electron beam writing, RIE, ion milling and thin film deposition.
我们同时对反应离子刻蚀工艺中的等离子体充电效应和离子轰击对氧化硅造成的损伤进行了讨论。
At the same time, the influence of plasma charging and ion bombardment on the quality of silicon oxide are analyzed.
新兴的3d互联技术以及高产量的MEMS应用需要成本低廉以及高产量的深层反应离子刻蚀系统。
Emerging 3d interconnection technologies and high volume MEMS applications require cost effective mass production DRIE systems.
对于光刻胶的去除用热丙酮泡、超声清洗、反应离子刻蚀和高温灰化法相结合，能达到较好的效果。
The other is the removal of SU-8, which can be resolved by the combination of marinating in hot acetone, ultrasonic cleanout, RIE and cineration at high temperature.
加速度计用普通的N型硅片制造，为了刻蚀高深宽比的结构，使用了深反应离子刻蚀（DRIE）工艺。
This accelerometer is fabricated by N type silicon wafer. To obtain high aspect ratio structure, deep reactive ion etching(DRIE) process is employed.
利用离子束刻蚀(IBE)和反应离子刻蚀(RIE)等干法刻蚀方法来制造带栅极的场发射阴极阵列。
The gated silicon field emitter arrays (FEA) with small gate aperture have been successfully fabricated by dry etching, including ion beam etching (IBE) and reactive ion etching (RIE).
对二氧化硅反应离子刻蚀中反应室压力，刻蚀气体流量和射频功率等因素对刻蚀速率和刻蚀均匀性的影响进行了研究。
The influence of chamber pressure, gas flow rate and RF power on micro loading effect in reactive ion etch of silicon dioxide is researched.
采用微波电子回旋共振等离子体反应离子刻蚀（E CR-R IE）装置对牦牛毛纤维进行表面改性，从而改善牦牛毛的可纺性。
Yak hairs were treated by the microwave electron cy cl otron resonance plasma reactive ion etching(ECR-RIE) equipment to improve its property of weave.
采用经过参数优化的DRIE刻蚀深硅槽，并用反应离子刻蚀(RIE)对深槽开口形状进行修正，制造了具有理想侧壁形状的深槽，利于介质的完全填充，避免产生空洞。
By optimizing DRIE parameters and RIE etching the trenches' opening, the ideal trench profile is obtained to ensure that the trenches are fully refilled without voids.
采用经过参数优化的DRIE刻蚀深硅槽，并用反应离子刻蚀(RIE)对深槽开口形状进行修正，制造了具有理想侧壁形状的深槽，利于介质的完全填充，避免产生空洞。
By optimizing DRIE parameters and RIE etching the trenches' opening, the ideal trench profile is obtained to ensure that the trenches are fully refilled without voids.
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