• 同时,位错密度下降并结成位错网络。

    Meanwhile, dislocation reduced in density and joined into network.

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  • 相变引起母相中位错的产生。

    Transformation creates dislocations in the parent phase.

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  • 并用位错理论对其安定机理做了初步分析。

    The mechanism of shakedown was discussed by using dislocation theory.

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  • 这些晶格可能有不完善之处,例如位错和空穴。

    These crystal lattices may have imperfections, such as dislocations and vacancies .

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  • 位错的发射机制。

    The mechanism of the dislocation emission.

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  • 最近,弹性固体的位错理论已经被应用于地震问题。

    Recently, the theory of dislocation in elastic solids has been applied to the earthquake problem.

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  • 而塑性下降则归因于较薄薄膜的晶粒内较少的可动位错。

    The decrease in the ductility of the microbeam is attributed to fewer mobile dislocations in the grain.

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  • 有序化形成第二相粒子后阻碍位错运动,提高合金强度。

    It leads to form the second phase particle, which hinder dislocation motion and improve alloy intensity.

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  • 透射电子显微镜的观测表明在ELO范围内位错密度很低。

    EM observations indicate that the dislocation density is very low in the ELO reg ion.

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  • 位错的形成与离子注入引进的损伤和淬火过程中的热应力有关。

    The ion-implantation damage defects and thermal stress during quenching step are responsible for the formation of dislocations.

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  • 这些结果表明,螺旋位错密度的降低延长了激光二极管的寿命。

    These results show that reducing the threading dislocation density extends the lifetime of LD.

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  • 复合材料的强化机制是位错强化与其他强化机制共同作用的结果。

    The strengthening mechanism of the composites was due to the dislocation strengthening and other strengthening mechanisms.

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  • 低温退火可以避免在顶部硅层中氧沉淀及延伸位错等缺陷的形成。

    The formation of oxygen precipitates and threading dislocations in top Si layer could be avoided by low temperature annealing.

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  • 此方法将埋在无穷大弹性介质中裂纹,模拟为连续分布的位错环。

    The method simulates the crack hiding in infinitely large elastic media as dislocation loop in continuous distribution.

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  • 研究压电材料在均匀热流作用下螺型位错与圆弧裂纹的相互作用。

    The interaction between piezoelectric screw dislocation and circular crack under remote uniform heat flux was investigated.

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  • 结果指出,在紧靠裂纹顶端的滑移面上出现和裂纹位错异号的位错。

    It is found that opposite sign dislocations appear on the slip plane immediately ahead of the crack tip.

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  • 实验结果表明,金刚石晶体中存在有位错、亚结构及包裹体等缺陷。

    The results show that there do exist some defects in the diamonds such as dislocation, substructure, inclusion, etc.

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  • 合金的变形机制主要是位错滑移,晶粒碎化和几何动态再结晶机制。

    The major deformation mechanisms were found to be dislocation glide, grain breaking, and geometric dynamic recrystallization (GDRX).

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  • 与位错核心相联系的悬空键在很大程度上决定着位错的光学电学性质。

    The dangling bonds associated with the dislocation core determine to a large extent the electrical and optical properties of the dislocations.

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  • 扫描电子显微镜图像显示这两种晶界原子结构中的位错排列十分相似。

    Imaging with scanning transmission electron microscopy showed that the atomic grain-boundary structure had dislocations that had very similar arrangement.

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  • 为了研究声子晶体因缺陷而产生的声波导问题,提出了同质位错缺陷模型。

    A homogeneous dislocation defect model was established to study the sonic waveguide of a photonic crystal with defects.

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  • 位错线、位错条带、胞结构和迷宫结构是锆合金低周疲劳典型的位错组态。

    Dislocation lines, dislocation bands, cell and labyrinth structures are typical dislocation configurations in the fatigued alloys.

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  • 位错一般分为两种形式,螺形和线形位错。其术语恰当地表征了它们的形状。

    Two general categories of dislocations are spiral and line, the terms being aptly descriptive of their shape.

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  • 这些负号位错将移至裂纹顶端并使之钝化而留下一个无位错区或低位错密度区。

    These negative dislocations seem to enter the crack tip and blunt it, resulting in a dislocation-free zone at the crack tip.

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  • 这些缺陷包括:包裹物,色心,开裂,台阶面,位错,小角晶界和位错塞积群。

    The defects include cracks, color center, inclusions, step-faceting, low-angle boundaries and dislocation pile-up group.

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  • 晶粒长大到微米尺度时,变形机制主要是位错协调的晶界滑移和位错滑移塑性。

    The main deformation mechanisms are dislocation accommodated grain boundary sliding and dislocation slip plasticity when the grains grow to micro size.

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  • 这种反演是在对当地断层活动有比较清楚的了解的基础上,依据位错理论进行的。

    The inversion is carried out based on the theory of dislocation and a well understanding about the local faults.

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  • 在考虑存在失配位错的情况下,计算了驰豫晶格失配、曲率半径和失配位错密度。

    In the case of considering the misfit dislocation, relaxed lattice mismatch, the radius of curvature and density of misfit dislocation were calculated.

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  • 在考虑存在失配位错的情况下,计算了驰豫晶格失配、曲率半径和失配位错密度。

    In the case of considering the misfit dislocation, relaxed lattice mismatch, the radius of curvature and density of misfit dislocation were calculated.

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