本发明提供了一种具有简单结构的能够探测激光的激光二极管器件。
A laser diode device capable of detecting laser light with a simple structure is provided.
二极管早已作为常规器件应用于多种电路中。
The diode is used routinely in many kinds of electronic circuits.
二极管早已作为常规器件应用于多种电路中。
The diode is used routinely in many kinds of electronic circuits .
大功率激光二极管阵列的正向特性失效问题严重影响器件的成品率和可靠性。
The forward characteristics failure of the high power laser diode array severely influences the yield and reliability of devices.
这些数据和结果有助于设计和研制自旋场效应晶体管、自旋发光二极管和自旋共振隧道器件等。
These data and results are helpful to design and develop spin field effect transistor, spin light-emitting diode, spin resonant tunneling device, etc.
综述了近红外激光二极管在气体传感中的应用，讨论了用于这一技术的器件和实验技术。
Application of near infrared laser diode to gas sensing is reviewed, followed by discussion on both the device characteristics and experimental techniques.
它可以被用来制作透明电极、压敏电阻、太阳能电池窗口、表面声波器件、气体传感器、发光二极管等。
ZnO can be used to fabricate transparency electrode, piezoresistor, cell battery window, surface acoustic wave device, gas sensor and light-emitting diode etc.
对有机发光二极管在传感器和光电子器件上应用的可能性进行了初步研究。
This paper explores the application probability of the organic light-emitting diodes(OLED) in the fields like sensors and optoelectronic devices.
它可以被用来制作透明电极、压敏电阻、太阳能电池窗口、表面声波器件、气体传感器、发光二极管等。
ZnO thin films can be used to fabricate transparency electrode, piezoresistor, cell battery window, surface acoustic wave device, gas sensor and light-emitting diode etc.
半导体用于制作像二极管、晶体管以及集成电路等电子器件。
Semiconductors are used in the manufacture of electronic devices such as diodes, transistors, and integrated circuits.
很多工程师把纳管看作硅的替代品，当今，晶体管、二极管和其他半导体器件通常都是制作在硅这种介质上。
Many engineers see nanotubes as an alternative to silicon, the medium in which transistors, diodes and other semiconductor device structures are usually built today.
为了满足高性能的红外探测要求，以高品质硅基器件研制了选择性外延锗硅肖特基二极管。
To satisfy the requirement for high performance infrared detector, a selective epitaxy Schottky barrier diode of SiGe was realized based on high quality silicon device.
共振隧穿二极管因其特有的负微分电阻特性，成为一种很有前途的基于能带工程的异质结构量子器件。
The resonant tunneling diode (RTD) is one of the most promising band-gap engineered heterostructure devices due to its negative differential resistance.
简介一种以锗雪崩光电二极管(APD)为光电转换器件的探测器电路的工作原理，详细介绍电路各组成部分的设计要求和设计要点。
The operation principle of a detecting circuit in which avalanche photo-diode (APD) is used as photoelectric conversion device and the every part of the circuit are presented.
利用统计分析手段，对高功率二极管激光器封装中各工艺环节引起器件失效的原因进行了分析和归类。
Using statistics analysis method, diode laser failure states were classified and the causes of these diode laser failures were analyzed in every packaging process.
介绍光发射二极管原理和器件。
This chair introduces the principles and devices of optical emitting diodes.
光控MOS栅固态继电器是由MOS栅控晶闸管、开关三极管、光电耦合器、增强型MOSFET和齐纳二极管组成的新型开关器件。
Optically triggered MOS gated solid state relay is a new switching device, which is composed of an MOS gated thyristor, a phototransistor, an enhanced mode MOSFET and a Zener diode.
包括锗硅单层、多层结构的外延生长、以及金属诱导生长多晶锗硅和肖特基二极管原型器件的制备。
The research focused on the growth of SiGe single layer, multi-layers, metal induced growth of poly-SiGe, Schottky barrier diodes (SBDs) were fabricated.
介绍一种紧凑的、能以较低输入光功率工作的光学双稳器件，由光电检测器、光纤定向耦合器和半导体激光二极管组合而成的。
A compact, low input power optical bistable device, combined with photodetector and optical fiber directional coupler and semiconductor laser diode, was presented.
此设计利用晶闸管、二极管等器件设计了一个转速、电流双闭环直流晶闸管调速系统。
The design uses thyristors, diodes and other devices designs a speed, current double-loop SCR DC converter system.
介绍了共振隧穿二极管（RTD）中电荷积累效应，利用顺序隧穿模型分析了RTD中有电荷积累时器件各部分电压的再分布；
The electric charge accumulation effect in RTD was introduced. The electrical voltage redistribution along the device as charge accumulated was analysed by sequential tunneling model.
它可用与制作发光显示器件、高频滤波器、发光二极管、激光器、高速光开关等器件，在民用及军事领域都有着重要的用途。
It can be used to fabricate display devices, high frequency filters, emitting diode, lasers and high-speed optical switch. Therefore, it has great USES in both civil and military fields.
根据本发明的又一方面，电荷平衡功率器件将诸如二极管的温度和电流感应元件结合在相同的管芯上。
According to another aspect of the invention, charge balanced power devices incorporate temperature and current sensing elements such as diodes on the same die.
本文还对主电路主要功率器件进行了参数计算，包括二极管、IGBT、电容、电感、缓冲吸收电路参数等。
Parameters of main power devices which include diode, IGBT, capacitor, inductance and buffer snubber circuit have been calculated in main circuit in the article.
共振隧穿二极管因其特有的负微分电阻特性，成为一种很有前途的基于能带工程的异质结构量子器件。
The resonant tunneling diode (RTD) is one of the most promising bandgap engineered heterostructure devices due to its negative differential resistance.
因此与IGBT、功率MOSFET等高频电子器件配套，且不可缺少的快速软恢复二极管的开发成为一个重要和迫切的需要。
Therefore, with the IGBT. power MOSFET high-frequency electronic devices such as matching, and the indispensable fast soft-recovery diodes developed into an important and urgent needs.
本发明涉及一种电气器件(图6)，其具有与穿通二极管(S)串联连接的可编程电阻器(PR)。
The present invention relates to an electrical device (Fig 6) having a programmable resistor (pr) connected in series to a punch-through diode (s).
滚轮两边各有一个叫做发光二极管的小型电子发光器件。
The wheels have a pair of small electronic light-emitting devices called light—emitting diodes (LED) mounted on either side4.
介绍了一种新型的双区阴极结构在W波段体效应二极管中的实现，并研制出了样品器件。
A new structure of two area cathodes applied in W-band Gunn diodes was introduced and made.
有机发光二极管（OLED）发光效率很大程度上受到器件中高折射率材料（ITO/有机物）对导波光能量的制约。
The extraction efficiency of organic light-emitting diode(OLED) is restrained by the high fraction of energy of the guided wave in the high-index materials(ITO/organic).
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