The raw materials contain two structures of ZnS, which are wurtzite and zinc blende respectively.
常压下纳米硫化锌球壳为纤锌矿结构和闪锌矿结构共存的混相结构。
Zhang 's group have focused on the coordinated conditions required to reliably grow ZnS nanowires.
张立德的研究小组专注于能使硫化锌纳米管线稳定生长的协调条件。
Using a gold catalyst, the team successfully synthesized semiconducting ZnS nanowires in bulk quantities using a simple and cheap process.
通过使用一种金催化剂，该研究小组利用一个简单和廉价的过程成功地合成了大量半导体硫化锌纳米线。
Since applying ZnSe, ZnS or Ge and coating with optimized layer, the beam-combination mirrors usually transmit infrared lights and reflect visible lights.
由于采用硒化锌、硫化锌或锗材料并镀有优化设计的薄膜，合束镜通常透射红外光，反射可见光。
HfOxNy thin films were deposited by radio frequency reactive magnetron sputtering onto multi-spectral ZnS substrates at different oxygen partial pressure.
用磁控反应溅射法在不同氧分压下制备了氮氧化铪薄膜。
Jinke Technology USES CVD ZnSe and ZnS and the following specifications are available. We also provide tailor-made design according to customers' requirements.
劲科科技研采用CVD硒化锌、硫化锌材料，拥有下列规格，并可根据客户需求进行设计加工。
This paper reported the preparation of pseudo-hexagonal ZnS nano-crystal powders used the hydrates of Zn(OAc)2 and Na2S by modified solid-state method at room temperature.
以硫化钠与醋酸锌为原料，采用改进的室温（湿）固相合成法制备硫化锌纳米晶。
ZnS, an significant optical material in ir regions, is applied in many optoelectronic systems where a suitable antireflection coating is required to enhance the transmission.
硫化锌是红外波段重要的光学材料，在许多光电系统应用中，要求镀制适当的减反膜增加其透过率。
On the basis of analysis on XPS (X-ray photoelectron spectroscopy) technique the information on electron states of ZnS powder, ZnS thin film surface and internal layer is obtained.
对硫化锌粉料、硫化锌半导体微晶薄膜进行了X射线光电子发射谱剖析。
Although the middle wave and long wave transmittance are all increased after multilayer antireflection films were coating on CVD ZnS, the technique of coating must be improved further.
镀多层防反膜以后，中、长红外波段透过率均有所提高，但镀膜技术还有待改进。
The optical properties and electrical structure of V in ZnS supercell have been computed by means of plane wave pseudo-potential method(PWP) with generalized gradient approximation(GGA).
运用密度泛函平面波赝势方法（PWP）和广义梯度近似（GGA），对替代式掺杂钒（V）的闪锌矿（ZnS）的超晶胞电子结构进行了计算。
ZnS has been recognized as a promising material for use in many fields such as ultraviolet (UV) detectors, short-wavelength light-emitting diode (LED), laser diode (LD), and solar cells, etc.
在紫外光探测器、短波长发光二极管、激光器二极管、太阳能电池等领域有着广泛的应用前景。
However, the selected area's electron diffraction shows that it has both cubic and hexagonal phase structures corresponding to different shapes. This is attributed to the isomeric state of ZnS.
样品选区电子衍射表明反应产物是立方相和六方相结构，认为这是硫化锌的同质异构现象。
However, the selected area's electron diffraction shows that it has both cubic and hexagonal phase structures corresponding to different shapes. This is attributed to the isomeric state of ZnS.
样品选区电子衍射表明反应产物是立方相和六方相结构，认为这是硫化锌的同质异构现象。
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