Wet etching: Use wet etching for metal layer and ITO conductive layer.
湿蚀刻：对于金属层和ITO导电层使用湿蚀刻进行蚀刻。
Through wet etching and ultrasonic experiment, no film falling is observed with microscope.
对样品进行了湿法腐蚀和超声实验，在显微镜下观察无膜脱落现象发生。
The purpose of this paper is to find ways to protect the pad and the structures on chip during the wet etching.
本课题的目的在于如何保护湿法腐蚀中芯片的焊盘和结构。
The microchannels were firstly constructed on a glass substrate by standard UV photolithography and wet etching technique.
首先，采用紫外光刻和化学湿法刻蚀技术在玻璃基片上加工微米深度的微通道；
We have explored technologies for the fabrication of VCSELs, such as wet etching, wet and selective oxidation and annealing.
对垂直腔面发射激光器的湿法腐蚀技术、选择氧化工艺、合金工艺等关键工艺进行了研究，得到了最佳工艺条件。
This result is just opposite from the ion implantation enhanced etching which was reported by many authors under wet etching.
这一结果与所报道的离子注入增强腐蚀的结果正好相反。
Then the LED of this kind of structure is gotten by means of wet etching, and its efficiency increases by 33% compared with normal LED.
并且采用湿法刻蚀技术，制备了该结构的LED芯片，测试得到该种LED芯片出光效率较之普通LED芯片提高了33%。
A new silicon-based bulk micro-machined amperometric microelectrode biosensor is designed and fabricated with anisotropic silicon wet etching.
本文提出了一种新型的硅基衬底体硅加工安培型微电极生物传感器。
Using IC-compatible silicon as substrate and MEMS processing technology, it is fabricated with silicon wet etching and SU8 micro reaction pool.
以与IC兼容的硅作为基底材料，利用MEMS加工工艺，采用硅腐蚀及SU8微反应池方法制成了新型微电极传感器。
The present invention relates to combined dry and wet etching process for multilayer film, especially in anisotropic magnetic resistance effect (AMR) sensor manufacture.
本发明涉及多层膜的蚀刻方法，特别是各向异性磁电阻效应(amr)传感器制造中所使用的多层膜的蚀刻方法。
A new method of laser assisted wet etching is proposed, which depends on the etching current characteristic and uniformity of etching image to select the suitable etchant.
提出了一种激光诱导液相腐蚀新方法——利用腐蚀电流特性和腐蚀图像均匀度相结合的方法，选择出适合的腐蚀溶液。
In chapter 3, the process technology of silicon mold by means of photolithography and wet etching was introduced, which is a important process of hot embossing technology.
第三章介绍的是热压工艺中的一个重要工艺环节——硅阳模制作工艺。
Etching requirements for those structures are given and optimal EPW wet etching condition and speed are obtained through experiments, which insure controllability and good quality of device structure.
根据探测器结构提出了对腐蚀工艺的要求，采用EPW湿法腐蚀的工艺，通过实验研究器件结构制作的最佳腐蚀条件和腐蚀速度，保证了工艺的可控性和器件结构的质量。
Evanescent wave fiber-optic sensors (EWFS) with acicular encapsulation were fabricated using silicon photolithography technology and silica wet-etching technology.
用硅光刻工艺和二氧化硅湿法腐蚀工艺制作了针状封装结构的光纤消逝场传感器。
Evanescent wave fiber-optic sensors (EWFS) with acicular encapsulation were fabricated using silicon photolithography technology and silica wet-etching technology.
用硅光刻工艺和二氧化硅湿法腐蚀工艺制作了针状封装结构的光纤消逝场传感器。
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