The optimal design of structure and layout for9926dual N-channel enhancement mode VDMOSFET is presented.
文章对9926型双N沟增强型VDMOSFET进行了结构和版图的优化设计。
A high reliability smart power VDMOSFET of high voltage with over current protection by oneself is descrital in the peper.
本文介绍一种高可靠的具有自动过流保护的智能高压大功率VDMOSFET，已研制出了漏源击穿电压大于200V；
A new approach to improve the high-voltage vertical double-diffused MOSFET (VDMOSFET) body-diode recovery speed is proposed.
提出了一种提高高压垂直双扩散MOS场效应晶体管(VDMOSFET)的体二级管恢复速度的新方法。
Furthermore, the optimal structure's characteristics are analyzed and parameters optimal analyzed by compare with conventional VDMOSFET.
我们分析了新结构的主要特性，并与常规VD - MOSFET进行了比较和参数优化分析。
Our work mainly focus on the improvements of reverse recovery charge and gate charge which impact much on high speed switching and high efficiency performance of a VDMOSFET.
本项目主要针对影响器件开关速率和高效性能的反向恢复电荷、栅电荷进行优化和改进。
Our work mainly focus on the improvements of reverse recovery charge and gate charge which impact much on high speed switching and high efficiency performance of a VDMOSFET.
本项目主要针对影响器件开关速率和高效性能的反向恢复电荷、栅电荷进行优化和改进。
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