Analysis of insulation resistances being lowered when GIS is evacuated is made in the vacuum process.
针对GIS在抽真空过程中出现的绝缘电阻阻值降低的现象进行了原因分析。
The impurity elements as Cd, Zn, Tl, Pb, Bi were removed from the crude indium by the vacuum process instead of the traditional way using reagent.
利用金属饱和蒸汽压的不同，采取在一定真空度下使铟熔化脱除粗铟中的镉，达到粗铟提纯的目的，同时考察了粗铟中其他杂质元素的变化。
The impurity elements as Cd, Zn, Tl, Pb, Bi were removed from the crude indium by the vacuum process instead of the traditional way using reagent.
利用金属饱和蒸汽压的不同，采取在一定真空度下使铟熔化脱除粗铟中的镉，达到粗铟提纯的目的，同时考察了粗铟中其他杂质元素的变化。
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