The high resistance film layer (such as V2O5) is formed on the surface of the metal layer.
该高阻值膜层(例如V2O5)形成于该金属层表面。
This work will do benefit for the fabrication of optoelectronic V2O5 thin films with large area and low cost.
该工作对于V2O5光电薄膜的大面积、低成本制备具有一定的参考价值。
The microstructure, the morphology and optical properties of V2O5 thin films were studied by XRD, SEM and spectrophotometer.
利用X射线衍射、扫描电子显微镜和分光光度计对制备的V2O5薄膜的结构、形貌和光学特性进行研究。
Devitrified foam glass was prepared taking cullet as major raw material using V2O5 as nuclear agent and adding other auxiliary materials.
以碎玻璃为主要原料，用V2O5作成核剂，再加入其它辅助原料制备了微晶泡沫玻璃。
D301 resin adsorbed with active deep blue K-R was regenerated by H2O2-V2O5 catalytic oxidation, and effect on regeneration efficiency were studied.
采用H2O2 -V2O5催化氧化法再生吸附了活性深蓝k - R的D301树脂，考察了各种因素对再生效率的影响。
The process of making high speed steel by direct alloying of scheelite, molybdenum oxide and V2O5 is calculated and analyzed by thermodynamics and kinetics.
对用白钨矿、氧化钼和V2O5直接合金化冶炼高速钢进行了热力学和动力学的计算和分析。
The following V2O5 recovery process is directly effected by the quality and the grade of vanadium slag, which is the main raw material to produce vanadium product.
钒渣作为生产钒产品的主要原料，其质量和品位直接影响到后续提取V2O5工艺。
Electrochemical results indicate that the kinds of the aqueous electrolyte, potential limit, scan rate, current density have influence on V2O5 capacitive performance.
电化学性能测试结果表明，水基电解液种类及浓度、电压范围、扫描速度、电流密度均对无定形V2O5电容性能产生影响。
The result indicated that the V2O5 thin film surface was uniform and compact, which had good light-admitting quality, electricity denaturation and thermal denaturation.
结果表明：所得的V2O5薄膜表面均匀致密，透光性良好，有较好的电致变性和热致变性。
We make some researches on the batch leaching charge lumping in the processing of V2O5, give an analysis on the causes which lead to charge lumping and affect the leaching.
针对攀枝花钢铁（集团）公司西昌分公司V2O5生产中的间歇式浸出物料结块进行了研究，分析了物料结块和影响浸出的原因，提出了防止物料结块的措施和解决方法，达到了提高浸出率、缩短浸出时间的目的。
X-ray diffraction (XRD) analysis shows that the as-sputtered film is almost amorphous while new phases V2O5(0 0 1), VO2(0 1 1, 1 -1 0) and V2O3(1 1 3) appear in the annealed films.
由X射线衍射（XRD）分析得知薄膜退火前是非晶的，而在退火后出现V2O5（0 01）和VO2（0 1 1，1 -1 0）以及V2O3（1 13）结晶相。
X-ray diffraction (XRD) analysis shows that the as-sputtered film is almost amorphous while new phases V2O5(0 0 1), VO2(0 1 1, 1 -1 0) and V2O3(1 1 3) appear in the annealed films.
由X射线衍射（XRD）分析得知薄膜退火前是非晶的，而在退火后出现V2O5（0 01）和VO2（0 1 1，1 -1 0）以及V2O3（1 13）结晶相。
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