The memory element includes a magnetic tunnel junction (MTJ) element and an electrode.
存储器组件包括一磁穿隧接 面（MTJ）组件与一电极。
The structure and fabrication of double-insulation layer tunnel junction(MIMIS) are introduced.
介绍了一种新型光电器件，即双绝缘层MIMIS隧道发光器件的结构和制备。
An electronic analog model to simulate the properties of Josephson tunnel junction is described in this paper.
本文考虑了各项隧道电流，以一个相位锁定环路模拟约瑟夫逊隧道结。
The master equation of the single electron triple barrier tunnel junction(TBTJ) model is developed based on the orthodox theory.
在正统理论的基础上 ，提出了单电子三势垒隧穿结模型的主方程 ，并用线性方程组解法求出了其稳态解 。
More particularly, the MTJ structure may be on the semiconductor substrate, and the digit line may be adjacent the magnetic tunnel junction structure.
更具体，MT J结构可以在半导体衬底上，以及数字线可以邻近磁隧道结结构。
A magnetic random access memory device may include a semiconductor substrate, a magnetic tunnel junction (MTJ) structure, a contact plug, and a digit line.
提供用于操作包括存储单元的磁随机存取存储器件的方法，该存储单元具有在衬底上的磁隧道结结构的。
If the tunnel junction capacitance becomes larger, the amplitude of the I-V curve of single-electron transistor becomes smaller, but the period is unchanged.
同时，单电子三极管I-V曲线的振幅随着隧道结电容的增大而减小，但I-V曲线的周期保持不变。
We have developed a method that uses a magnetic double barrier tunnel junction to study spin flip scattering in nanometer sized spacer layers near the ballistic limit.
文章作者提出了一种使用双势垒磁性隧道结来研究纳米尺度结构中弹道区域的自旋翻转散射效应的新方法。
If a tibial tunnel is placed anterior to this junction, graft injury may result from impingement.
如果胫骨隧道位于交界处的前方，移植肌腱就可能因为撞击而损伤。
For the Chenjiachong tunnel rebuilding project, the junction and seepage of the fresh and old concrete are tested by using the ground penetrating radar and microwave humidity equipment.
结合既有陈家冲隧道改建工程，采用探地雷达和微波湿度测定仪检测了新旧混凝土接缝处结合状态和渗漏情况。
For the Chenjiachong tunnel rebuilding project, the junction and seepage of the fresh and old concrete are tested by using the ground penetrating radar and microwave humidity equipment.
结合既有陈家冲隧道改建工程，采用探地雷达和微波湿度测定仪检测了新旧混凝土接缝处结合状态和渗漏情况。
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