The factors of MOS transistor in the saturation region are analyzed, the mismatch models are optimized, and the model parameter extraction is done by least squares curve fitting method.
通过分析MOS管在饱和区失配因素，优化MOS管失配模型，提出用最小二乘曲线拟合法进行相关模型参数提取。
The article introduces the development process of the complex transistor of high impedance, including the design of structure parameter, artwork layout and the development result.
本文介绍了高阻抗复合管的研制过程，包括结构多数的设计，工艺设计，以及研制结果。
The article introduces the development process of the complex transistor of high impedance, including the design of structure parameter, artwork layout and the development result.
本文介绍了高阻抗复合管的研制过程，包括结构多数的设计，工艺设计，以及研制结果。
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