The transistor gate may be formed from first and second gate conductors with different work functions.
晶体管栅极可以由具有不同功函数的第一栅极导体和第二栅极导体形成。
The transistor gate has a distinct advantage over the diode gate in that the transistor amplifies, as well as acts as a gate.
晶体管门电路比起二极管门电路来有一个显著的优点，那就是晶体管除了起门的作用外还能够放大。
Typically used in the transistor element called the gate, polysilicon has been part of the standard chip-manufacturing process for decades.
多晶硅常用在被称作门的晶体管元件中，已在标准的芯片制造工艺中使用了几十年。
Intel claimed a breakthrough in transistor technology by announcing that it was ready to use its 3D Tri-Gate chip, first unveiled in 2002, in high-volume manufacturing.
英特尔公司(Intel)称其在晶体管技术中取得了重大突破——应用三栅级晶体管技术的3D芯片将进入量产阶段。 该技术首次亮相于2002年。
In order to comprehend schottky gate of organic static induction transistor, chapter two expatiates characteristics of PN junction and schottky junction.
为了理解有机静电感应三极管的肖特基栅极原理，本文在第二章阐述了PN结和肖特基结的特性。
The paper expounds MOS system power element's characters, insulated gate bipolar transistor and integration type power element's technology and its applications.
本文阐述了MOS系列功率器件的特性、绝缘栅双极型晶体管和集成型功率器件技术，以及它们的应用。
Having a better-functioning gate also lets more current flow when the transistor is on.
同时还能在晶体管开启时通过尽可能多的电流。
A new network model for the complementary lateral insulated-gate bipolar transistor CLIGBT is presented in this paper.
本文提出互补横向绝缘栅双极晶体管CLIGBT的一种网络模型。
The system adopted insulated gate bipolar transistor (IGBT) as its main circuit and pulse-width modulating (PWM) technology.
该系统采用IGBT（绝缘栅双极型晶体管）器件，PWM（脉宽调制）控制技术。
A method to simulate the characteristics of insulated gate bipolar transistor (IGBT) with PSPICE program is proposed in this paper.
提出了一种用PSPICE程序模拟绝缘栅双极型晶体管(IGBT)特性的方法。
A theoretical analysis of a remote gate quantum transistor and a middle gate quant (?) m transistor based on a T-shape electron waveguide is presented.
对两种T型电子波导器件即遥控栅量子晶体管和中间栅量子晶体管进行了理论研究。
Each transistor may be formed from a gate insulating layer formed on a semiconductor.
每个晶体管可以由形成在半导体上的栅极绝缘层形成。
Schottky gate resonant tunneling transistor (SGRTT) is fabricated.
通过流片，制作出肖特基栅共振隧穿三极管(SGRTT)。
The gate source breakdown performance of static induction transistor was studied experimentally.
对静电感应器件的栅源击穿特性做了实验研究。
In practical terms, this smallest feature was almost always the line that defined the gate electrode on the MOS transistor.
实际中，这个特性总是用来定义MOS晶体管的闸极电极走线。
The high speed insulated gate bipolar transistor (IGBT) transport model is derived by ambipolar transport theory in this paper.
借助双极传输理论导出了高速绝缘栅双极晶体管(IGBT)传输特性的物理模型。
One affect is to improve the transistor performance while retaining or even improving the level of gate leakage.
一种影响是在保持、甚至改善栅极漏电水平的同时改善晶体管性能。
During a read operation, the read transistor is activated to produce an output signal indicative of the charge stored in the floating gate node.
在读取操作期间，该读取晶体管被激活以产生指示储存在该浮置栅极节点中的电荷的输出信号。
The threshold voltage of the transistor thus formed is controlled by the amount of charge that is retained on the floating gate.
如此形成的晶体管的阈值电压由保持在浮动栅极上的电荷量控制。
Impact ionization arises from a charge injector (25), defining a virtual diode (30) in the substrate (20) of a floating gate charge storage transistor (11).
碰撞电离通过一在一浮栅电荷存储晶体管(11)的衬底(20)中限定一虚拟二极管(30)的电荷注入器(25)而产生。
The inverter can be manufactured with the insulation gate bipolar transistor module.
逆变器采用绝缘栅双极晶体管模块制造。
The neuron MOS transistor was invented in 1991. It is a high-functional floating-gate MOS transistor with multiple-input control-gates.
神经MOS晶体管是1991年发明出来的一种具有高功能度的多输入栅控制的浮栅MOS器件。
The invention provides a transistor capable of self-aligning top gate structure and a method of manufacturing the same.
提供了一种具有自调整顶栅结构的晶体管及其制造方法。
Especially, the circuit of NAND gate my be totally made by NPN transistor, and the circuit structure is simple, easily is complicated by Integrate circuit.
其与非门电路不仅全部由npn型晶体管构成，且结构非常简单，容易做成集成电路。
The relative sizes of the first and second gate conductors in a given transistor control the threshold voltage for the transistor.
在给定晶体管中的第一栅极导体和第二栅极导体的相对尺寸控制晶体管的阈值电压。
Level restoration pass-transistor logic is proposed for low speed cell while dynamic transmission gate logic for high speed cell.
低速单元采用带有电平恢复的传输管逻辑实现，高速单元采用动态传输门逻辑实现。
This paper has designed a inverter power supply of volume 2KVA, working frequency 20KHZ. , based on that has analyzed the characteristic of IGBT (Insulated Gate Bipolar Transistor).
本文在分析了IGBT（绝缘栅双极晶体管）特性的基础上，设计了一台容量为2KVA、频率为20KHZ的高频逆变电源。
Silicon insulated-gate bipolar transistor (IGBT) technology is progressing, becoming better and cheaper.
硅绝缘栅双极晶体管(IGBT)技术在进步，成为更好和更便宜。
An assistant 380V AC-input and multi-output switching power supply is introduced which is used in thick-film driving circuits for large-power IGBT(Insulated Gate Bipolar Transistor).
介绍了一种用于大功率IGBT厚膜驱动电路的380V系统输入、多路输出辅助开关电源。
An assistant 380V AC-input and multi-output switching power supply is introduced which is used in thick-film driving circuits for large-power IGBT(Insulated Gate Bipolar Transistor).
介绍了一种用于大功率IGBT厚膜驱动电路的380V系统输入、多路输出辅助开关电源。
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