On a basic bipolar transistor, with ports for electrical input and output, the law applies straightforwardly.
在一般的双极晶体管，带有电输入和输出端口，这定律完全适用。
The researchers modelled the thermal effects of a heterojunction bipolar transistor in an integrated circuit using thermal resistors and thermal capacitors.
研究人员通过使用热电阻和热电容对集成电路中异质连接双极型晶体管的热效应进行建模分析。
The circuit is constructed by a operational amplifier and bipolar transistor current mirrors with multiple outputs.
该电路由一集成运算放大器及多端输出的双极晶体管电流镜构成。
An improved plan of silicon controlled rectifier (SCR) line type trigger is described in detail. Anew practical circuit of bipolar transistor trigger for high pulse repeat frequency is presented.
详细地介绍了可控硅整流器(SCR)线型触发器的改进型设计方案，提出了用于高脉冲重复频率的双极晶体管触发器的实用新电路。
A high accuracy temperature sensor is designed by applying the temperature characteristics of a substrate bipolar transistor in CMOS technology.
利用CMOS工艺下衬底型双极晶体管的温度特性，设计了一种精度较高的温度传感器。
The paper expounds MOS system power element's characters, insulated gate bipolar transistor and integration type power element's technology and its applications.
本文阐述了MOS系列功率器件的特性、绝缘栅双极型晶体管和集成型功率器件技术，以及它们的应用。
The process is compatible to the existing double poly-silicon self-aligned NPN transistor process, which can be used to fabricate high-performance complementary bipolar circuits.
该工艺与已有的双层多晶硅自对准NPN晶体管工艺相兼容，可用于制造高性能的互补双极电路。
Semiconductor diodes bipolar junction transistors field-effect transistors transistor amplifiers frequency response operational amplifiers differential and multistage amplifiers integrated circuits.
半导体、二极体、双极电晶体、场效电晶体、电晶体放大器、频率响应、算放大器、差动及多极放大器、积体电路。
The paper analyses the electric circuit and the working principle of the avalanche of the bipolar transistor of the pulser with a cascade connected bipolar transistor structure.
讨论了采用级联双极性晶体管结构的超宽带极脉冲发生器，并对其电路及双极性晶体管雪崩的工作原理进行了具体分析。
The system adopted insulated gate bipolar transistor (IGBT) as its main circuit and pulse-width modulating (PWM) technology.
该系统采用IGBT（绝缘栅双极型晶体管）器件，PWM（脉宽调制）控制技术。
The main structure and key performance parameters of the bipolar transistor were studied and designed, it was taped out and tested.
对双极晶体管结构和关键性能参数进行了研究和设计，并进行了流片测试。
A new network model for the complementary lateral insulated-gate bipolar transistor CLIGBT is presented in this paper.
本文提出互补横向绝缘栅双极晶体管CLIGBT的一种网络模型。
A method to simulate the characteristics of insulated gate bipolar transistor (IGBT) with PSPICE program is proposed in this paper.
提出了一种用PSPICE程序模拟绝缘栅双极型晶体管(IGBT)特性的方法。
The new bipolar junction field effect transistor (BJFET) has the features of both bipolar and junction field effect devices.
新型双极结型场效应晶体管(BJFET)兼有双极型和单极场效应两种器件的功能特点。
Silicon insulated-gate bipolar transistor (IGBT) technology is progressing, becoming better and cheaper.
硅绝缘栅双极晶体管(IGBT)技术在进步，成为更好和更便宜。
As a result, output character of PNP bipolar transistor is barely satisfying.
这些原因导致了PNP双极晶体管的输出性能差强人意。
Lateral channel field-controlled thyristor is a combination of a NJFET and a PNP bipolar transistor.
水平沟道场控晶闸管是由结型场效应晶体管和双极型晶体管复合构成的一种晶闸管。
The model considers the drift velocity saturation of carriers and influence of parasitic bipolar transistor. As a result, electric field profile of n drift in LDMOS at on state is obtained.
该模型考虑了载流子的速度饱和现象和寄生双极性晶体管的影响，获得了开态下LDMOS漂移区中的电场分布。
Second breakdown mechanisms of bipolar power transistor is summarized.
概述了双极功率晶体管二次击穿机理。
The inverter can be manufactured with the insulation gate bipolar transistor module.
逆变器采用绝缘栅双极晶体管模块制造。
Plastic capsulation power bipolar transistor exists many reliability problems due to the structure and package style.
由于其自身的结构与封装形式，塑封双极型功率管存在很多可靠性问题。
A design of boost converter using high-power insulated bipolar transistor IGBT module named SKM75GAL123D and driver module named EXB840 is introduced.
介绍了一种用大功率绝缘栅极双极型晶体管(IGBT)模块SKM75GA L 123d和驱动模块EXB840设计的直流升压斩波器。
A new photodetector, the bipolar junction photogate transistor, was proposed for CMOS image sensor.
本文提出一种新的用于CMOS图像传感器像素的光电检测器——双极结型光栅晶体管。
Provided is an insulated gate bipolar transistor (IGBT) which occupies a small area and in which a thermal breakdown is suppressed.
本发明提供一种绝缘栅双极晶体管(IGBT)，所述绝缘栅双极晶体管占据小面积并且抑制热击穿。
The high speed insulated gate bipolar transistor (IGBT) transport model is derived by ambipolar transport theory in this paper.
借助双极传输理论导出了高速绝缘栅双极晶体管(IGBT)传输特性的物理模型。
The testing objects of the instrument are low power transistors, including the common diode, the bipolar transistor, the field effect transistor and so on.
本仪器测试的对象为小功率晶体管，包括：各种二极管、双极性三极管、场效应管等。
This paper has designed a inverter power supply of volume 2KVA, working frequency 20KHZ. , based on that has analyzed the characteristic of IGBT (Insulated Gate Bipolar Transistor).
本文在分析了IGBT（绝缘栅双极晶体管）特性的基础上，设计了一台容量为2KVA、频率为20KHZ的高频逆变电源。
The model considers the drift velocity saturation of carriers and influence of parasitic bipolar transistor.
最后对高场下电子漂移速度的稳态和瞬态变化规律进行了研究。
The model considers the drift velocity saturation of carriers and influence of parasitic bipolar transistor.
最后对高场下电子漂移速度的稳态和瞬态变化规律进行了研究。
应用推荐