If we select substrate temperature, laser power and the scan speed properly, we can get good crystallization. It is useful to the fabrication of SOI devices.
适当选择衬底温度、激光功率和扫描速度可望获得良好的结晶,它对SO I器件的制作是有意义的。
If we select substrate temperature, laser power and the scan speed properly, we can get good crystallization. It is useful to the fabrication of SOI devices.
适当选择衬底温度、激光功率和扫描速度可望获得良好的结晶,它对SO I器件的制作是有意义的。
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