The effect of polarity of the applied voltage on TDDB was investigated.
观察了所加电压极性对TDDB的影响。
TDDB(time-dependent dielectric breakdown)is a key method to value the quality of thin gate oxide.
经时绝缘击穿（TDDB）是评价薄栅氧化层质量的重要方法。
Hot-carrier enhanced TDDB effect of ultra-thin gate oxide is investigated by using substrate hot-carrier injection technique.
本文通过衬底热载流子注入技术，研究了热载流子增强的超薄栅氧化层TDDB效应。
With the consideration of the drain bias on the impact of TDDB, we have optimized the anti-fuse structure, which improve the programming speed and data storage reliability.
针对漏极偏置对经时击穿的影响，对反熔丝结构做了优化，提高了编程速度和数据存储的可靠性。
TDDB evaluation experiments are implemented on the thin gate oxides MOS capacitor, and a method of precise measurement and characterization the trap density and accumulative failure are presented.
采用恒定电流应力对薄栅氧化层MOS电容进行了TDDB评价实验，提出了精确测量和表征陷阱密度及累积失效率的方法。
TDDB evaluation experiments are implemented on the thin gate oxides MOS capacitor, and a method of precise measurement and characterization the trap density and accumulative failure are presented.
采用恒定电流应力对薄栅氧化层MOS电容进行了TDDB评价实验，提出了精确测量和表征陷阱密度及累积失效率的方法。
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