Obviously, the sustaining voltage can also be increased since the anode-short structure makes the breakdown performance of the IGBT close to a normal PN junction.
我们对这种方案进行了仔细分析，包括在设计工作条件和非设计工作条件下IGBT的性能，结果表明：该结构在两种情况下都能明显改善IGBT的关断、耐压性能。
Obviously, the sustaining voltage can also be increased since the anode-short structure makes the breakdown performance of the IGBT close to a normal PN junction.
我们对这种方案进行了仔细分析，包括在设计工作条件和非设计工作条件下IGBT的性能，结果表明：该结构在两种情况下都能明显改善IGBT的关断、耐压性能。
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