"These surface states have a very special property that prevents the scattering process from occurring," says Kane.
凯恩称：“这种神奇物质的表面状态有种特殊性能，可避免电子散射现象的发生。”
The Schrdinger equation and Poisson equation are solved self-consistently to calculate the new two dimensional surface states.
从薛定谔方程和泊松方程的自洽计算中得到了新的二维表面态。
The influence of the thickness and concentration of the cap layer, as well as the component of the substrate, on the surface states is also obvious.
包覆层的厚度和掺杂浓度，以及基底的成分都能显著地影响表面电子态。
This new two dimensional surface states model explains the origin of surface states and the contradiction between deep surface levels and the low activation energy of a transient current.
用该态模型解释了氮化物产生高密度表面态的原因和深表面能级与较浅的瞬态电流激活能间的矛盾。
It is found that the electrons may be transferred into delocalized states with high energy and transited to surface states through hot electron tunneling under high electron concentration.
发现在高电子密度下电子会向量子限制较弱的退局域态转移。同时还经由热电子隧穿而跃迁到表面态。
At present, many effective solutions have been given for the first question. But, there's no any method to reduce the influence of surface states and interfacial layer on breakdown voltage.
针对第一个问题，国内外已提出很多从结构上解决的方案且得到有效应用，如何减少表面态和界面层的影响仍没有找到比较好的解决方法。
By means of tensile tests at high temperature, bending strength and indentation, it is found that the mechanical properties of silicon mainly depend on surface states, dislocations and impurities.
利用高温拉伸、抗弯测试和显微压痕测试等研究手段，指出硅材料表面状况、位错和杂质是其机械性能的主要影响因素。
By means of tensile tests at high temperature, bending strength and indentation, it is found that the mechanical properties of silicon mainly depend on surface states, dislocations and impurities.
利用高温拉伸、抗弯测试和显微压痕测试等研究手段，指出硅材料表面状况、位错和杂质是其机械性能的主要影响因素。
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