Based on analysis of the principle of substrate current of MOSFETs, a new hot carriers resistant structure of CMOS digital circuits is proposed.
本文在分析MOSFET衬底电流原理的基础上，提出了一种新型抗热载流子退化效应的CMOS数字电路结构。
Degradation characteristics of gate current and substrate current during stress are studied, and an accurate analytic degradation model of gate current is presented.
深入研究了热载流子退化过程中栅电流和衬底电流的退化规律，并建立了一个准确的栅电流退化解析模型。
Degradation characteristics of gate current and substrate current during stress are studied, and an accurate analytic degradation model of gate current is presented.
深入研究了热载流子退化过程中栅电流和衬底电流的退化规律，并建立了一个准确的栅电流退化解析模型。
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