The model includes the substrate bias effect, the short channel effect and the relation between these two effects.
它综合考虑了衬偏效应、短沟道效应以及两者之间的关系。
The results showed that diffusion coefficient and diffusive distance increased with raising of negative substrate bias.
结果表明扩散系数和扩散距离都随着负衬底偏压的增大而增大。
And, with the enhancement of substrate bias voltage, electron energy increase gradually, electron density decrease sharply.
且随着基片偏压值的增大，电子能量有缓慢的增加，而电子密度则显著下降。
In the paper, the enhancing process of diamond nucleation by negative substrate bias in hot filament CVD system was analyzed.
对利用热灯丝cvd沉积金刚石膜时负衬底偏压增强金刚石的核化过程进行了分析。
In this paper, the nucleation process of diamond by filament CVD was analyzed, and enhanced flux of ions by negative substrate bias was investigated in theory.
木文对热灯丝cvd沉积金刚石膜的核化过程进行了分析，从理论上研究了负衬底偏压增强活性离子的流量。
In this paper, the nucleation process of diamond by filament CVD was analyzed, and enhanced flux of ions by negative substrate bias was investigated in theory.
本文对热灯丝cvd沉积金刚石膜的核化过程进行了分析，从理论上研究了负衬底偏压增强活性离子的流量。
The diamond growth rate may be enhanced by the substrate bias due to the changes of atomic hydrogen concentration and the increase of mean electron temperature.
偏压的升高可提高电子平均温度及衬底表面附近氢原子的相对浓度；
The main process parameters include hydrogen content in the gas sources, hydrogen plasma catalyst pretreatment, substrate bias, deposition temperature and plasma flow guiding.
主要之制程参数包括气源中之氢气含量、电浆前处理、材偏压、积温度以及电浆导流板之施加。
Tetrahedral amorphous carbon (ta-C) films have been deposited on P-type (100) polished c-silicon wafer with different substrate negative bias by filtered cathodic vacuum arc technology.
采用过滤阴极真空电弧技术并施加一定的衬底负偏压，在P（100）单晶硅片上制备出四面体非晶碳薄膜。
Selfnegative bias on insulate substrate surface of rf glow discharge plasma reactors is studied theoretically. The mathematical analysis has been obtained by equivalent circuit method.
讨论了高频辉光放电等离子体系统中绝缘衬底表面的自负偏压问题，用等效电路方法给出了自负偏压的数学解析。
The film component phase is dependent primarily on the negative bias of substrate.
膜的相组成主要是基板负偏压所决定的。
This paper mainly deals with the relationship between negative bias of substrate and component phases of magnetron-sputtering ion plated aluminium film of A3 steel.
本文主要论述基板负偏压与A 3钢基体磁控溅射离子镀铝膜相组成的关系。
By controlling pressure, type of diamondoid precursor and bias voltage, the new method prevents the diamondoid precursor from fully breaking upon impact with the substrate.
通过控制压力、类金刚石母体的种类和偏置电压，这种新的方法防止了类金刚石母体在撞击基材时完全解体。
The nonlinear change of sheath capacitance result in the nonlinear change of tuned substrate self-bias.
鞘层电容的非线性变化导致了基片偏压的非线性变化。
The emission region is capable of emitting light omnidirectionally in response to a bias, with the porous layer enhancing extraction of the emitting region light passing through the substrate.
半导体发射区域能够回应于偏压全方向地发射光，而使多孔层增强通 过基层的发射区域的光的提取。
Not long ago, a new phenomenon that there was bistate, jumped delay in tuned substrate self-bias was found for the first time in an experiment, and researched in detail.
在以前的实验中，首次发现了基片调谐偏压的跳变、双稳回滞现象，并且对此进行了详细的研究。
Influence of discharge parameters such as RF power and working pressure on the negative self-bias voltage of substrate was investigated by an oscilloscope with a high voltage probe.
采用高压探头示波器系统研究了射频辉光放电参数对自偏压的影响规律。
The RF self-bias of the substrate in an RF inductively coupled plasma is controlled by changing the impedance of an external circuit inserted between the substrate and the ground.
采用调节射频电感性耦合等离子体中基片电极与地之间的外部电路阻抗的方法，控制基片电极的射频自偏压。
Self-bias voltage of the dielectric substrate surface and voltage of the driven electrode were experimentally studied to improve the energy control of impinging ion in plasma processes.
在薄膜沉积和离子束刻蚀技术中，通常要给绝缘基片加上一个射频或脉冲电极，以便在绝缘基片上形成一个自偏压来控制轰击到绝缘基片表面的离子能量。
The hydrogen and boron ion bombardments were performed by applying a negative bias voltage to the substrate during microwave plasma chemical vapor deposition process.
在微波等离子体化学气相沉积金刚石膜时，采用负偏压使氢和硼离子轰击金刚石膜表面。
Ions sputtering could lead to the decrease of the thickness when the substrate negative bias voltage increases excessively.
负偏压过大对吸附离子产生反溅射作用导致涂层厚度减小。
However, when the substrate negative bias is more than 200 v, the surface roughness of the films is increased because of the increased graphite phase in the films.
当负偏压超过200V后，由于薄膜中石墨相增多，薄膜表面粗糙度将增大。
However, when the substrate negative bias is more than 200 v, the surface roughness of the films is increased because of the increased graphite phase in the films.
当负偏压超过200V后，由于薄膜中石墨相增多，薄膜表面粗糙度将增大。
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