The displacement vectors of the stacking faults were determined by the disappearing image laws of the faults.
根据层错的消像规律，确定了各个层错的位移矢量。
The behavior of oxidation-induced stacking faults (OSF) in NCZ and CZ silicon single crystal was investigated.
采用直拉法生长普通和掺氮硅单晶，研究不同含氮浓度的晶体中氧化诱生层错（OSF）的行为。
With increase of carbon supersaturation (e. g. CH4 amount in the gas phase) faceted diamonds get less and a high amount of twins and stacking faults are introduced into the deposited diamond.
随着碳的超饱和度(如气相中的甲烷含量)的增大，多面金刚石减少，大量的孪晶和堆垛层错进入沉积的金刚石中。
With increase of carbon supersaturation (e. g. CH4 amount in the gas phase) faceted diamonds get less and a high amount of twins and stacking faults are introduced into the deposited diamond.
随着碳的超饱和度(如气相中的甲烷含量)的增大，多面金刚石减少，大量的孪晶和堆垛层错进入沉积的金刚石中。
应用推荐