The invention relates to a magnetic confinement magnetron sputtering method and a magnetron sputtering device prepared by use of the same.
本发明涉及一种磁约束磁控溅射方法及利用该方法制备的磁控溅射装置。
The utility model belongs to a magnetic control sputtering film coating technology and relates to a magnetic control sputtering device in particular.
本实用新型属磁控溅射镀膜技术，具体涉及一种磁控溅射装置。
The magnetron sputtering device can effectively overcome the problem that the prior art is low in target material utilization rate and deposition rate.
其可以有效克服现有技术存在的靶材利用率低和沉积速率低的问题。
The utility model relates to a semi-circular column magnetic control sputtering cathode, belonging to a sputtering source component of a magnetron sputtering device.
一种半圆柱磁控溅射阴极，属于磁控溅射装置中的溅射源部件。
The plasma can be 4 generated by hot-cathode discharge or RF discharge of gas. In addition, the device has four metal plasma sources, two magnetron sputtering targets, cold and hot target supports.
真空室内的气体等离子体可由热灯丝或射频放电产生，4另外还配置了4个金属等离子体源、两套磁控溅射靶和冷却靶台。
The invention relates to a device for improving utilization rate of a high vacuum ion beam sputtering target material.
本发明涉及一种高真空离子束溅镀靶材利用率增强装置。
The invention relates to a device for improving utilization rate of a high vacuum ion beam sputtering target material.
本发明涉及一种高真空离子束溅镀靶材利用率增强装置。
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