SOI technology is used to reduce the device capacitance and increase transistor performance.
SOI技术用于减少器件电容和提高晶体管性能。
Also, the PSD device structures based on SOI technology were suggested in order to improve the response speed of sensitive devices.
同时为提高器件的响应速度，提出了基于SOI技术的PS D器件结构。
It is confirmed in this work that SOI technology has a bright future in the area of development and production of semiconductor circuits and devices.
肯定了SOI结构在半导体电路和器件研制、生产中具有重要的发展前景。
An intelligent control system of high temperature environmental test for SOI device is introduced, which is based on the technology of bus integration.
本文介绍了基于总线集成控制技术设计的SOI器件高温环境实验装置的智能控制系统。
The flow technology can be effectively applied to standard library development of other CMOS and SOI processes.
此技术可以有效地应用于其他CMOS或SOI工艺标准单元库的开发。
The thick SOI films were prepared by SIMOX technology and Si epitaxy process.
利用SIMOX技术和硅外延工艺制备了厚膜SOI材料。
The high quality SOI (silicon on insulator) materials were prepared with highly selective and self-stopping full isolation by porous oxidized silicon (FIPOS) technology.
采用高选择和自终止多孔氧化硅全隔离技术制备了高质量的SOI材料。
Introduced a new bulk silicon micromaching technology to replace SOI wafer with normal silicon wafer in the application of sidewall electrical connection.
介绍了一种全新的体硅微机械工艺，可以取代SOI硅片而直接在普通硅片上对不同的侧壁电学导通部分进行绝缘。
Combining the two processes, a compatible technology of SOI full dielectric isolation and complementary bipolar process is experimented. Vertical pup and npn transisto…
从实验的角度提出了一种SOI材料全介质隔离与高频互补双极工艺兼容的工艺途径。
The first test parts from Luxtera's technology are presently being manufactured by Freescale in its mainstream 130nm SOI silicon.
来源于Luxtera技术的首批测试部件目前正由Freescale在其主流的130nm SOI硅工艺线上制造。
A new technology of smart cut using helium ion implantation to form SOI was presented. The process of smart cut was introduced and research results was demonstrated by means of XTEM in this paper.
报道了用氦离子注入智能剥离形成SOI结构硅片的新技术，介绍了这种技术的工艺和用剖面透射电镜研究的结果。
Features of rf SOI CMOS technology are presented with emphasis on its low cross-talk characteristics and passive element performances.
介绍了RFSOICMOS技术的特点。着重论述了RF SOI CMOS技术的低串扰特性、低损耗特性及其优质无源元件的性能。
Features of rf SOI CMOS technology are presented with emphasis on its low cross-talk characteristics and passive element performances.
介绍了RFSOICMOS技术的特点。着重论述了RF SOI CMOS技术的低串扰特性、低损耗特性及其优质无源元件的性能。
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