They weave through rush-hour traffic, mount pavements and roar down the labyrinthine alleys known as soi.
他们穿梭在高峰期的车流中，时而骑上人行道，时而转进迷宫般的胡同。
Like with SOA, SOI has different and sometimes conflicting definitions.
像SOA一样，SOI有着许多不同甚至偶尔冲突的定义。
Yes, SOI exposes existing application functionality as a service interface.
没错，SOI将现有应用暴露成服务接口。
Chapter 7, Architecture, question 68, addressed the question of what is SOI.
在第7章“架构”的问题68中，回答了什么是SOI的问题。
SOI technology is used to reduce the device capacitance and increase transistor performance.
SOI技术用于减少器件电容和提高晶体管性能。
Smart power IC's based on SOI are also developed.
基于SOI的智能功率集成电路也得到开发。
SIMOX is one of the most promising SOI technologies.
SIMOX技术是最具有发展前途的SOI技术之一。
The thick SOI films were prepared by SIMOX technology and Si epitaxy process.
利用SIMOX技术和硅外延工艺制备了厚膜SOI材料。
A SOA integration hub, however, is not the same thing as service-oriented integration (SOI).
然而，SOA整合中心不同于面向服务的整合(service - orientedintegration,SOI)。
SOI has the advantages of resisting high temperature and radiation, easy to be batch produced.
SOI传感器具有耐高温、抗辐射、易于批量生产等优点。
If you live to be 100, I hope I live to be 100 minus 1 day, soI never have to live without you.
假如你的寿命是100年，那我希望自己活到100岁的前一天，因为那样我的生命中每天都有你。
The flow technology can be effectively applied to standard library development of other CMOS and SOI processes.
此技术可以有效地应用于其他CMOS或SOI工艺标准单元库的开发。
In either case SOI becomes more than simply exposing existing applications' functionality as a service interface.
不论上述哪种情况，SOI都比简单地将现有应用的功能暴露成服务接口来得复杂。
DSOI, bulk si and SOI MOSFETs are fabricated on the same die successfully using local oxygen implantation process.
通过局域注氧工艺，在同一管芯上制作了DSOI、体硅和SOI三种结构的器件。
The fabrication of Bragg gratings on silicon-on-insulator (SOI) rib waveguides using electron-beam lithography is presented.
报道了一种用电子束曝光的方法在绝缘体上硅的脊状光波导上制做布拉格光栅的技术。
The realization of the SOI HVIC chip offers sound experimental evidence to a further step of applying the SOI HVIC into practice.
该SOI高压功率集成电路芯片的实现，为进一步实现实用化的SOI高压驱动电路提供了有力的实验验证。
The patterns mentioned in Table 3 below are some of the patterns for SOA and SOI that have been "mined" from a variety of projects
下面的表3中提到的模式是从各种项目中“挖掘”出来的SOA和SOI 模式的一部分
The fabrication process of a compact planar waveguide etched-grating(EDG) demultiplexer based on silicon-on-insulator(SOI) is studied.
研究了基于绝缘材料上的硅（SOI）材料的平面波导刻蚀光栅分波器的主要制作工艺。
But due to an insulating layer in its structure, the tolerance of total dose irradiation of SOI is poorer than normal silicon material.
但由于绝缘埋层的引入，使得材料本身的抗总剂量辐照能力反而不如体硅材料。
Methods The intraocular pressure(IOP) and anterior chamber angles of 34 eyes(33 patients)undergone pars plana vitrectomy and SOI were observed.
方法对33例34只眼行硅油填充术的患者的眼压和房角进行前瞻性研究。
Several methods manufacturing the SOI(simulator on silicon) materials are described and the main application fields of SOI devices are presented.
介绍了SOI材料的几种制备技术及SOI材料的主要应用领域。
Specially, the photonic crystal waveguides based on SOI(silicon on insulator) are paid much attention to due to their miniaturization and low loss.
特别是以SOI材料为基础的光子晶体光波导以其小型化、低损耗的优势而备受人们的关注。
It is confirmed in this work that SOI technology has a bright future in the area of development and production of semiconductor circuits and devices.
肯定了SOI结构在半导体电路和器件研制、生产中具有重要的发展前景。
Additionally, Flexfet's unique MIGFET on SOI process creates an inherent radiation tolerance, which is extremely useful in avionics and space systems.
此外，Flexfet独特的MIGFET片上工艺具有固有的耐辐射性能，对于航空电子设备和空间系统非常有用。
An intelligent control system of high temperature environmental test for SOI device is introduced, which is based on the technology of bus integration.
本文介绍了基于总线集成控制技术设计的SOI器件高温环境实验装置的智能控制系统。
An arrayed waveguide grating (AWG) demultiplexer with total internal reflection (TIR) mirrors is designed based on silicon-on-insulator (SOI) material.
设计了一种基于绝缘体上的硅材料的全内反射型阵列波导光栅解复用器件。
Silicon-on-insulator (abbreviated as SOI) optical waveguide is the base of silicon-based optical waveguide devices and other integrated optical devices.
SOI光波导是硅基光波导器件的基础，也是实现其它集成光学器件的基础。
Introduced a new bulk silicon micromaching technology to replace SOI wafer with normal silicon wafer in the application of sidewall electrical connection.
介绍了一种全新的体硅微机械工艺，可以取代SOI硅片而直接在普通硅片上对不同的侧壁电学导通部分进行绝缘。
DC model of SOI MOSFET including output current model and threshold voltage model is proposed in this paper. The velocity saturation effect is considered.
本文首先建立了一个SOIMOSFET器件的直流漏电流模型和阈值电压模型，模型考虑了速度饱和效应。
DC model of SOI MOSFET including output current model and threshold voltage model is proposed in this paper. The velocity saturation effect is considered.
本文首先建立了一个SOIMOSFET器件的直流漏电流模型和阈值电压模型，模型考虑了速度饱和效应。
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