The invention discloses the method of reclaiming and utilizing the silicon single crystal waste of semiconductor device and integrated circuit.
本发明公开了一种半导体器件与集成电路硅单晶废弃片的回收利用方法。
The present invention relates to an apparatus for manufacturing a high-quality semiconductor single crystal ingot and a method using the same.
本发明涉及一种用于制造高质量半导体单晶锭的装置以及使用该装置的方法。
The present invention relates to an apparatus for manufacturing a high-quality semiconductor single crystal ingot and a method using the same.
本发明涉及一种用于制造高质量半导体单晶锭的装置以及使用该装置的方法。
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