We work with a completely new transistor concept, in which a carbon nanotube or a single organic molecule takes the place of the traditional semi-conductor transistor.
在这里碳纳米管或者单有机分子替代了传统的半导体晶体管。我们发现新的晶体管能用做一个磁性存储器。
By connecting one set of electrodes to multiple "fins" in a single transistor, the company can make transistors that operate with a greater drive current-a plus for high-performance operation.
通过将单个晶体管中的一组电极与多个鳍片进行连接，能够使这种驱动电流增强的晶体管获得更高的性能。
The invention of the transistor in 1947 and the microprocessor (which integrated transistors and other things onto a single chip) in 1958 changed the way radios function.
1947年晶体管的发明以及1958年微处理器的诞生(它将晶体管和其他组件集成在一块芯片上)改变了无线电技术的工作方式。
Based on the orthodox theory, a model of a single electron transistor (SET) of metallic tunneling junctions is built using the master equation method.
在正统理论的基础上，使用主方程法建立了金属结单电子晶体管的器件模型和算法流程。
The generation mechanisms of these physical phenomena of Coulomb blockade, Coulomb staircase, single electron tunneling were described with single electron transistor(SET) as the research object.
以单电子晶体管为研究对象，系统阐述了库仑阻塞、库仑台阶、单电子隧穿等物理现象的产生机理。
A while back Dutch scientists managed to create a nanotube activated transistor that could toggle on and off with the flow of a single electron.
前阵子荷兰科学家成功创造出依靠单个电子进行开关的碳纳米管晶体管。
It is pointed out that there are some questions determining configuration of single transistor amplifier, the general method and common circuit are given.
指出确定晶体管单管放大电路组态时存在的问题并进行了讨论，给出确定的一般方法及单管放大电路的通用电路。
Hundreds of people huddled around a single transistor radio listening to the announcement.
数百人挤在一台晶体管收音机周围收听公告。
Combining with old transistor curve grapher, using single chip computer and serial port communication, the transistor characteristic curves is displayed on the microcomputer.
将其与传统的晶体管图示仪相结合并通过单片机和串行通信在微机上显示晶体管特性曲线。
With the development of VLSI technology, a single chip can contain over one billion transistor. Multithreading technique is the developing trend of high performance processor in the future.
随着生产工艺的提高，芯片上能集成越来越多的晶体管，多线程技术也逐步成为一种主流的处理器体系结构技术。
The single-electron transistor is a kind of newly found fascinating device in recent years.
单电子晶体管是几年前才发现的一种功能奇特的新型器件。
Introduced the method of multi-transistor modular design, for the output ability are limited in single high-frequency power transistor.
介绍了因单个高频大功率晶体管输出能力有限而采用多管并联运用(积木式)的方法。
If the tunnel junction capacitance becomes larger, the amplitude of the I-V curve of single-electron transistor becomes smaller, but the period is unchanged.
同时，单电子三极管I-V曲线的振幅随着隧道结电容的增大而减小，但I-V曲线的周期保持不变。
An improved alternative single-chop PWM control mode is proposed in the paper, which ensures the consistency of power loss between the upper transistor and the lower one.
提出一种改进型单斩pwm调制方式，对桥臂上下管进行轮换单斩，保证了每个开关管损耗的一致性。
The A1210-A1214 Hall-effect latches include the following on a single silicon chip: voltage regulator, Hall-voltage generator, small-signal amplifier, Schmitt trigger, and NMOS output transistor.
在A1210 - A 1214霍尔效应锁存包括一个单一的硅芯片上以下内容：稳压器，霍尔电压发生器，小信号放大器，施密特触发器和NMOS输出晶体管。
The A1210-A1214 Hall-effect latches include the following on a single silicon chip: voltage regulator, Hall-voltage generator, small-signal amplifier, Schmitt trigger, and NMOS output transistor.
在A1210 - A 1214霍尔效应锁存包括一个单一的硅芯片上以下内容：稳压器，霍尔电压发生器，小信号放大器，施密特触发器和NMOS输出晶体管。
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